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USMC1000-100V 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Calmos CM10PT10V1F, microwave MIS MNOS chip capacitors on 5 mils Silicon Si 10 x 10 mils 0.6 to 28.2 pF for microwave applications manufactured by US Microwaves
USMC1000-100V 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Calmos CM10PT10V1F, microwave MIS MNOS chip
capacitors on 5 mils Silicon Si 10 x 10 mils 0.6 to 28.2 pF for microwave applications manufactured by US Microwaves US
MICROWAVES 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Advanced Microwave Components USMC1000-100V FEATURES
APPLICATIONS MIS (MNOS, MOS) CHIP CAPACITOR Very high Q over wide range of frequencies 2GHz to 40 GHz. Low insertion
loss <0.08dB from 2GHz to 18GHz High reliability and ruggedness characteristic of semiconductor devices Small chip size
due to high capacitance per unit area and wide range of capacitance Low temperature coefficient and wide operating
temperature range. Microwave hybrid circuits DC blocks Capacitive coupling RF bypass capacitors Capacitive loads
Oscillators, multipliers Filters, matching networks Switch and comb generators 100V MIS (MNOS, MOS) SILICON CHIP
CAPACITORS USMC1000-100V PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMC1000-100V Series of MIS chip capacitors are
designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave
circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the
temperature coefficient has to be as small as possible. US MICROWAVES advanced semiconductor and thin film technologies
allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher
microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high
insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS
chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and
series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most
chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high
stability, low temperature coefficients, low leakage in ≤nA range and high BV from 5, 10, 25, 50, 100 to 300V. MIS Chip
capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages. TECHNOLOGY
DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced
semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold
interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability.
Thin film technology is the preferred solution for all applications that require low noise, long term stability and
excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition
of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are
available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves
products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL CHARACTERISTICS
@25°C PARAMETER VALUE UNITS Capacitance range 0.6 to 28.2 pF Capacitance tolerance 5, 10, 20 % Temperature Coefficient
-55°C to 150°C 50 ppm/°C Operating Temperature range -65 to 200 °C Maximum withstanding voltage (Vw) see Note 1 250 V
Maximum Continuous Operating voltage (Vmax) [Vmax=0.4*Vw] 100 V Peak voltage at 25°C, 5 sec 150 V Insulation resistance
at 25°C 1e10 Ω Leakage current at 50% of withstanding voltage IL <1 nA Thermal conductivity 1.2 °C/cm/W Equivalent
Series Res.@ 18GHz <0.05 Ω MAXIM SAFE ESD strike level per Human Body Model [S-ESDmax=(1+C/100)*Vmax] see Note 2
<(1+C/100)*Vmax V UNSAFE ESD strike level per Human Body Model [ESDmax=(1+C/100)*WV] see Note 2 <(1+C/100)*Vw V Note 1:
Devices should NEVER be subjected to maximum withstanding voltage WV. Long term reliability will be adversely affected
and severe damage of devices may result. Note 2: This information is provided to users to be aware of this device ESD
sensitivity and take appropriate measures to prevent permanent damage. Please see NOTE 1. ESD warning! MIS capacitors
are ESD sensitive. ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed
absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION SUBSTRATE THICKNESS [mils]
DIE SIZE LxW [mils] Silicon (Si) 5±1 10x10±2 (0.25x0.25±0.05 mm) CONDUCTOR BONDING PADS BACKSIDE METAL Gold (Au) min
4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier Backside of the die is metallized with standard
Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization is available for special
orders. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For
Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically
updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).
MIS (MNOS, MOS) CHIP CAPACITOR DIE LAYOUT / MECHANICAL SPECIFICATIONS 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS
USMC1000-100V MIS (MNOS, MOS) CHIP CAPACITOR CHIP MOUNT 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC1000-100V MIS
MNOS MOS chip capacitor mount MIS (MNOS, MOS) CHIP CAPACITOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Silicon
Microwave MIS (MNOS, MOS) Chip Capacitors are designed for critical designs where space is at premium. The Silicon
Microwave MIS (MNOS, MOS) Chip Capacitors can be die attached to the PCB or to a base plate using AuSn or AuGe
preforms. Since the Silicon Microwave MIS (MNOS, MOS) Chip Capacitors do not have terminals, they have to be attached
using gold wire after the backside is soldered in place. Backside metallization for Silicon Microwave MIS (MNOS, MOS)
Chip Capacitors is Ti/Pt/Au which is also compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside
metallization should be requested. STANDARD PRODUCTS ORDERING INFORMATION USM P/N C [pF] WAFFLE PACK MIN. QTY U/P [$]
FILM FRAME MIN. QTY U/P [$] USMC1000-100V-130 13 -WP 10000 0.525 -FF 60000 0.174 USMC1000-100V-130 13 -WP 50000 0.444
-FF 300000 0.153 EIA-24 PART NUMBER BUILDER TOLERANCE [%] C [pF] Multiplier PACKAGE P/N FINDER Products sold for space,
military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order
levels to be established on a case by case basis. For any special applications, die level KGD qualification
requirements, different packaging or custom configurations, contact sales department. INSTANT QUOTE US Microwaves P/N
Quantity E-mail ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an
order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified,
accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding
contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs,
delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING:
All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For
larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume
automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a
particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard
products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as
accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements
of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or
modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used
within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft,
space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.
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