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USMC5500-10V-1800 180pF 10V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Vishay NCDxxx, Aeroflex MC2-S-055-055, CMD California Micro Devices CC-D, Mini-Systems Inc MSCC-5, microwave MIS MNOS chip capacitors on 5 mils Silicon Si 55 x 55 mils 180 pF for microwave applications manufactured by US Microwaves
USMC5500-10V-1800 180pF 10V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Vishay NCDxxx, Aeroflex MC2-S-055-055, CMD
California Micro Devices CC-D, Mini-Systems Inc MSCC-5, microwave MIS MNOS chip capacitors on 5 mils Silicon Si 55 x 55
mils 180 pF for microwave applications manufactured by US Microwaves US MICROWAVES 180pF 10V MIS (MNOS, MOS) SILICON
CHIP CAPACITORS Advanced Microwave Components USMC5500-10V-1800 FEATURES APPLICATIONS MIS (MNOS, MOS) CHIP CAPACITOR
Very high Q over wide range of frequencies 2GHz to 40 GHz. Low insertion loss <0.08dB from 2GHz to 18GHz High
reliability and ruggedness characteristic of semiconductor devices Small chip size due to high capacitance per unit
area and wide range of capacitance Low temperature coefficient and wide operating temperature range. Microwave hybrid
circuits DC blocks Capacitive coupling RF bypass capacitors Capacitive loads Oscillators, multipliers Filters, matching
networks Switch and comb generators 180pF 10V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC5500-10V-1800 PRODUCT
DESCRIPTION AND SHORT APPLICATION NOTE USMC5500-10V Series of MIS chip capacitors are designed to be used in chip and
wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When
used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be
as small as possible. US MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction
of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High
quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high
breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q
values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower
than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors
with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature
coefficients, low leakage in ≤nA range and high BV from 5, 10, 25, 50, 100 to 300V. MIS Chip capacitors are available
in a wide range of die sizes, capacitance values and breakdown voltages. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN
FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film
technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization
and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the
preferred solution for all applications that require low noise, long term stability and excellent performance at very
high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive
films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and
are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured
using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL CHARACTERISTICS @25°C PARAMETER VALUE
UNITS Capacitance range 180 pF Capacitance tolerance 5, 10, 20 % Temperature Coefficient -55°C to 150°C 50 ppm/°C
Operating Temperature range -65 to 200 °C Maximum withstanding voltage (Vw) see Note 1 25 V Maximum Continuous
Operating voltage (Vmax) [Vmax=0.4*Vw] 10 V Peak voltage at 25°C, 5 sec 15 V Insulation resistance at 25°C 1e10 Ω
Leakage current at 50% of withstanding voltage IL <1 nA Thermal conductivity 1.2 °C/cm/W Equivalent Series Res.@ 18GHz
<0.05 Ω MAXIM SAFE ESD strike level per Human Body Model [S-ESDmax=(1+C/100)*Vmax] see Note 2 28.0 V UNSAFE ESD strike
level per Human Body Model [ESDmax=(1+C/100)*WV] see Note 2 70.0 V Note 1: Devices should NEVER be subjected to maximum
withstanding voltage WV. Long term reliability will be adversely affected and severe damage of devices may result. Note
2: This information is provided to users to be aware of this device ESD sensitivity and take appropriate measures to
prevent permanent damage. Please see NOTE 1. ESD warning! MIS capacitors are ESD sensitive. ONLY Proper die handling
equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage
to the device. GENERAL DIE INFORMATION SUBSTRATE THICKNESS [mils] DIE SIZE LxW [mils] Silicon (Si) 5±1 55x55±2
(1.40x1.40±0.05 mm) CONDUCTOR BONDING PADS BACKSIDE METAL Gold (Au) min 4x4 mils, 3µm thick, 99.99% electroplated gold
with a TiW barrier Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver
filled conductive epoxy. Custom metallization is available for special orders. All US Microwaves products are available
in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain
items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are
100% tested, visual inspected and shipped in waffle packs (WP). MIS (MNOS, MOS) CHIP CAPACITOR DIE LAYOUT / MECHANICAL
SPECIFICATIONS 180pF 10V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC5500-10V-1800 MIS (MNOS, MOS) CHIP CAPACITOR CHIP
MOUNT 180pF 10V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC5500-10V-1800 MIS MNOS MOS chip capacitor mount MIS (MNOS,
MOS) CHIP CAPACITOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Silicon Microwave MIS (MNOS, MOS) Chip Capacitors are
designed for critical designs where space is at premium. The Silicon Microwave MIS (MNOS, MOS) Chip Capacitors can be
die attached to the PCB or to a base plate using AuSn or AuGe preforms. Since the Silicon Microwave MIS (MNOS, MOS)
Chip Capacitors do not have terminals, they have to be attached using gold wire after the backside is soldered in
place. Backside metallization for Silicon Microwave MIS (MNOS, MOS) Chip Capacitors is Ti/Pt/Au which is also
compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested. STANDARD
PRODUCTS ORDERING INFORMATION USM P/N C [pF] WAFFLE PACK MIN. QTY U/P [$] FILM FRAME MIN. QTY U/P [$] USMC5500-10V-1800
180 -WP 10000 1.533 -FF 3000 2.061 USMC5500-10V-1800 180 -WP 50000 0.999 -FF 15000 1.188 Products sold for space,
military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order
levels to be established on a case by case basis. For any special applications, die level KGD qualification
requirements, different packaging or custom configurations, contact sales department. INSTANT QUOTE US Microwaves P/N
Quantity E-mail ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an
order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified,
accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding
contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs,
delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING:
All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For
larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume
automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a
particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard
products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as
accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements
of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or
modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used
within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft,
space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.
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