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USMC11000-200V 200V MIS (MNOS, MOS) SILICON CHIP CAPACITORS microwave MIS MNOS chip capacitors on 5 mils Silicon Si 110 x 110 mils 253.6 to 5132.2 pF for microwave applications manufactured by US Microwaves
USMC11000-200V 200V MIS (MNOS, MOS) SILICON CHIP CAPACITORS microwave MIS MNOS chip capacitors on 5 mils
Silicon Si 110 x 110 mils 253.6 to 5132.2 pF for microwave applications manufactured by US Microwaves US MICROWAVES
200V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Advanced Microwave Components USMC11000-200V FEATURES APPLICATIONS MIS
(MNOS, MOS) CHIP CAPACITOR Very high Q over wide range of frequencies 2GHz to 40 GHz. Low insertion loss <0.08dB from
2GHz to 18GHz High reliability and ruggedness characteristic of semiconductor devices Small chip size due to high
capacitance per unit area and wide range of capacitance Low temperature coefficient and wide operating temperature
range. Microwave hybrid circuits DC blocks Capacitive coupling RF bypass capacitors Capacitive loads Oscillators,
multipliers Filters, matching networks Switch and comb generators 200V MIS (MNOS, MOS) SILICON CHIP CAPACITORS
USMC11000-200V PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMC11000-200V Series of MIS chip capacitors are designed
to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit
resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature
coefficient has to be as small as possible. US MICROWAVES advanced semiconductor and thin film technologies allow for
an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave
frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation
resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip
capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series
resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip
sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high
stability, low temperature coefficients, low leakage in ≤nA range and high BV from 5, 10, 25, 50, 100 to 300V. MIS Chip
capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages. TECHNOLOGY
DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced
semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold
interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability.
Thin film technology is the preferred solution for all applications that require low noise, long term stability and
excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition
of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are
available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves
products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL CHARACTERISTICS
@25°C PARAMETER VALUE UNITS Capacitance range 253.6 to 5132.2 pF Capacitance tolerance 5, 10, 20 % Temperature
Coefficient -55°C to 150°C 50 ppm/°C Operating Temperature range -65 to 200 °C Maximum withstanding voltage (Vw) see
Note 1 500 V Maximum Continuous Operating voltage (Vmax) [Vmax=0.4*Vw] 200 V Peak voltage at 25°C, 5 sec 300 V
Insulation resistance at 25°C 1e10 Ω Leakage current at 50% of withstanding voltage IL <1 nA Thermal conductivity 1.2
°C/cm/W Equivalent Series Res.@ 18GHz <0.05 Ω MAXIM SAFE ESD strike level per Human Body Model
[S-ESDmax=(1+C/100)*Vmax] see Note 2 <(1+C/100)*Vmax V UNSAFE ESD strike level per Human Body Model
[ESDmax=(1+C/100)*WV] see Note 2 <(1+C/100)*Vw V Note 1: Devices should NEVER be subjected to maximum withstanding
voltage WV. Long term reliability will be adversely affected and severe damage of devices may result. Note 2: This
information is provided to users to be aware of this device ESD sensitivity and take appropriate measures to prevent
permanent damage. Please see NOTE 1. ESD warning! MIS capacitors are ESD sensitive. ONLY Proper die handling equipment
and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the
device. GENERAL DIE INFORMATION SUBSTRATE THICKNESS [mils] DIE SIZE LxW [mils] Silicon (Si) 5±1 110x110±2
(2.79x2.79±0.05 mm) CONDUCTOR BONDING PADS BACKSIDE METAL Gold (Au) min 4x4 mils, 3µm thick, 99.99% electroplated gold
with a TiW barrier Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver
filled conductive epoxy. Custom metallization is available for special orders. All US Microwaves products are available
in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain
items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are
100% tested, visual inspected and shipped in waffle packs (WP). MIS (MNOS, MOS) CHIP CAPACITOR DIE LAYOUT / MECHANICAL
SPECIFICATIONS 200V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC11000-200V MIS (MNOS, MOS) CHIP CAPACITOR CHIP MOUNT
200V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC11000-200V MIS MNOS MOS chip capacitor mount MIS (MNOS, MOS) CHIP
CAPACITOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Silicon Microwave MIS (MNOS, MOS) Chip Capacitors are designed for
critical designs where space is at premium. The Silicon Microwave MIS (MNOS, MOS) Chip Capacitors can be die attached
to the PCB or to a base plate using AuSn or AuGe preforms. Since the Silicon Microwave MIS (MNOS, MOS) Chip Capacitors
do not have terminals, they have to be attached using gold wire after the backside is soldered in place. Backside
metallization for Silicon Microwave MIS (MNOS, MOS) Chip Capacitors is Ti/Pt/Au which is also compatible with Sn
solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested. STANDARD PRODUCTS ORDERING
INFORMATION USM P/N C [pF] WAFFLE PACK MIN. QTY U/P [$] FILM FRAME MIN. QTY U/P [$] USMC11000-200V-242 2400 -WP 10000
3.093 -FF 800 8.424 USMC11000-200V-242 2400 -WP 50000 1.857 -FF 4000 4.152 EIA-24 PART NUMBER BUILDER TOLERANCE [%] C
[pF] Multiplier PACKAGE P/N FINDER Products sold for space, military or medical applications, element evaluation and/or
level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any
special applications, die level KGD qualification requirements, different packaging or custom configurations, contact
sales department. INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line at:
http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued
instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves
sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die
products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be
available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are
100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on
film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4"
wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that
have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves
guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S.
Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is
assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its
use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S.
Microwaves products are not authorized for and should not be used within support systems which are intended for
surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear
facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF
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