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USMC1210-5V 5V MIS (MNOS, MOS) SILICON CHIP CAPACITORS microwave MIS MNOS chip capacitors on 5 mils Silicon Si 100 x 120 mils 251.3 to 50881.6 pF for microwave applications manufactured by US Microwaves
USMC1210-5V 5V MIS (MNOS, MOS) SILICON CHIP CAPACITORS microwave MIS MNOS chip capacitors on 5 mils Silicon Si
100 x 120 mils 251.3 to 50881.6 pF for microwave applications manufactured by US Microwaves US MICROWAVES 5V MIS (MNOS,
MOS) SILICON CHIP CAPACITORS Advanced Microwave Components USMC1210-5V FEATURES APPLICATIONS MIS (MNOS, MOS) CHIP
CAPACITOR Very high Q over wide range of frequencies 2GHz to 40 GHz. Low insertion loss <0.08dB from 2GHz to 18GHz High
reliability and ruggedness characteristic of semiconductor devices Small chip size due to high capacitance per unit
area and wide range of capacitance Low temperature coefficient and wide operating temperature range. Microwave hybrid
circuits DC blocks Capacitive coupling RF bypass capacitors Capacitive loads Oscillators, multipliers Filters, matching
networks Switch and comb generators 5V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC1210-5V PRODUCT DESCRIPTION AND
SHORT APPLICATION NOTE USMC1210-5V Series of MIS chip capacitors are designed to be used in chip and wire hybrid
circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as
resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small
as possible. US MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series
resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality
dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown
voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in
excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than
conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with
silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature
coefficients, low leakage in ≤nA range and high BV from 5, 10, 25, 50, 100 to 300V. MIS Chip capacitors are available
in a wide range of die sizes, capacitance values and breakdown voltages. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN
FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film
technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization
and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the
preferred solution for all applications that require low noise, long term stability and excellent performance at very
high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive
films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and
are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured
using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL CHARACTERISTICS @25°C PARAMETER VALUE
UNITS Capacitance range 251.3 to 50881.6 pF Capacitance tolerance 5, 10, 20 % Temperature Coefficient -55°C to 150°C 50
ppm/°C Operating Temperature range -65 to 200 °C Maximum withstanding voltage (Vw) see Note 1 12.5 V Maximum Continuous
Operating voltage (Vmax) [Vmax=0.4*Vw] 5 V Peak voltage at 25°C, 5 sec 7.5 V Insulation resistance at 25°C 1e10 Ω
Leakage current at 50% of withstanding voltage IL <1 nA Thermal conductivity 1.2 °C/cm/W Equivalent Series Res.@ 18GHz
<0.05 Ω MAXIM SAFE ESD strike level per Human Body Model [S-ESDmax=(1+C/100)*Vmax] see Note 2 <(1+C/100)*Vmax V UNSAFE
ESD strike level per Human Body Model [ESDmax=(1+C/100)*WV] see Note 2 <(1+C/100)*Vw V Note 1: Devices should NEVER be
subjected to maximum withstanding voltage WV. Long term reliability will be adversely affected and severe damage of
devices may result. Note 2: This information is provided to users to be aware of this device ESD sensitivity and take
appropriate measures to prevent permanent damage. Please see NOTE 1. ESD warning! MIS capacitors are ESD sensitive.
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings
may cause permanent damage to the device. GENERAL DIE INFORMATION SUBSTRATE THICKNESS [mils] DIE SIZE LxW [mils]
Silicon (Si) 5±1 120x100±2 (3.05x2.54±0.05 mm) CONDUCTOR BONDING PADS BACKSIDE METAL Gold (Au) min 4x4 mils, 3µm thick,
99.99% electroplated gold with a TiW barrier Backside of the die is metallized with standard Ti/Pt/Au compatible with
Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization is available for special orders. All US Microwaves
products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is
3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and
wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). MIS (MNOS, MOS) CHIP CAPACITOR
DIE LAYOUT / MECHANICAL SPECIFICATIONS 5V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC1210-5V MIS (MNOS, MOS) CHIP
CAPACITOR CHIP MOUNT 5V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC1210-5V MIS MNOS MOS chip capacitor mount MIS
(MNOS, MOS) CHIP CAPACITOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Silicon Microwave MIS (MNOS, MOS) Chip Capacitors
are designed for critical designs where space is at premium. The Silicon Microwave MIS (MNOS, MOS) Chip Capacitors can
be die attached to the PCB or to a base plate using AuSn or AuGe preforms. Since the Silicon Microwave MIS (MNOS, MOS)
Chip Capacitors do not have terminals, they have to be attached using gold wire after the backside is soldered in
place. Backside metallization for Silicon Microwave MIS (MNOS, MOS) Chip Capacitors is Ti/Pt/Au which is also
compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested. STANDARD
PRODUCTS ORDERING INFORMATION USM P/N C [pF] WAFFLE PACK MIN. QTY U/P [$] FILM FRAME MIN. QTY U/P [$] USMC12000-5V-243
24000 -WP 10000 3.078 -FF 500 8.382 USMC12000-5V-243 24000 -WP 50000 1.851 -FF 2500 4.647 EIA-24 PART NUMBER BUILDER
TOLERANCE [%] C [pF] Multiplier PACKAGE P/N FINDER Products sold for space, military or medical applications, element
evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case
basis. For any special applications, die level KGD qualification requirements, different packaging or custom
configurations, contact sales department. INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line at:
http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued
instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves
sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die
products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be
available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are
100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on
film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4"
wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that
have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves
guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S.
Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is
assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its
use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S.
Microwaves products are not authorized for and should not be used within support systems which are intended for
surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear
facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF
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