BCC12040 7 Bit Binary MOS chip capacitors for precision RF and Microwave chip and wire hybrid circuits US Microwave BCC series

BINARY CHIP CAPACITORS BCCQ4545 SERIES (4 Bit)

BCCQ4545 4Bit Series is designed to facilitate bread-boarding or to use where a trimming capability is required. By connecting the pads in parallel the capacitance values are additive, so many combinations are possible. The BCCQ4545 4Bit-Series of binary chip capacitors are designed to be used as RF bypass, DC blocks, coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible.
U.S. Microwaves’ advanced semiconductor and thin film technologies allow for an important reduction of the series resistance DCR which is increasing the SRF of the capacitor. High quality dielectrics with low loss factors translates into an increased Q.

These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs.
The BCCQ series of binary chip capacitors are manufactured on quartz and designed to satisfy the requirements of prototype development and circuit trimming in hybrid packages through selective wire-bonding. BCCQ4545 4Bit Series has4 bonding pads allowing the user to select specified increments and a wide range of values. The desired capacitance value is obtained by bonding gold wires to the appropriate pads. This binary chip capacitor can also be used as a single capacitor with maximum value C=C1+C2+C3+C4.
Custom designs are available upon request. Custom products.

USM Part #	Code	C1(pF)	C2(pF)	C3(pF)	C4(pF)	C Total (pF)
BCCQ4545B4	0.0125/2	0.0125	0.025	0.050	0.100	0.1875

BINARY CHIP CAPACITORS SPECIFICATIONS
Dielectric/Substrate	Thickness (mil)	Die size (mils)	Breakdown Voltage	Tolerance q%	Capacitance
SiO2	7±1	(45±2) x (45±2)	min.50V@100nA	1,5,10, 20	0.254pF-0.277pF

PROCESS INFORMATION
Dielectric	Bonding Pads	Backside metallization
U.S. Microwaves'BCCQ has dielectric SiO2 of 100% purity.For more information see "Microwave Thin Film Circuits-Standard Materials Specifications"	The bonding pads of the capacitors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30min at 400°C in air without loss of adhesion.	The backside of the capacitor die is metallized with Ti/Pt/Au, which is compatible with most die attaching methods, including conductive epoxy, AuSn, AuGe. Other metallizations are available upon special request for Au:Si eutectic die attach.

MORE PROCESS INFORMATION: US Microwaves employs proprietary state-of-the-art LPCVD, PECVD and vacuum deposition technologies for deposition of a wide range of dielectric materials to satisfy every chip capacitor application. High quality dielectrics are deposited using proprietary technologies which makes it possible to pack very high capacitance values onto a quite small area. The dielectric materials are high stability, high Q, low temperature coefficients TCC, low voltage coefficients, low leakage and high breakdown voltages. For special applications, U.S.Microwaves employs a proprietary trimming technique that allows production of capacitors with tolerances as low as 1% for C>10pF.

ORDERING INFORMATION BCC2525B5 (min/max)-q%
TOLERANCE	MINIMUM ORDER	U/P($)>1K	U/P($)>5K	U/P($)>10K	U/P($)>50K	U/P($)>100K	ORDER
20%
10%
5%
1%

US MICROWAVES www.usmicrowaves.com Tel:(408)986-8026 Fax:(408)986-8027