|Custom Model Silicon Chip Capacitors MIS MOS MNOS USMC6056T14-222 - Series of chip capacitors are designed to be used as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. U. S. MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of the series resistance DCR that is increasing the SRF of the capacitor. High quality dielectrics with low loss factors translate into an increased Q. The microwave capacitors are manufactured on high conductivity silicon substrates. The dielectrics are SiO2 and Si3N4 and the capacitors are available with single or dual dielectric. The die thickness is 0.005 +/- 0.001. The top plate of the capacitors is 99.99% electroplated or sputtered gold with a TiW barrier that withstands half hour at 400 deg. C without loss of adhesion. Minimum 1.5 micrometers of Au enhance the top plate bond ability. The backside of the die is metalized with Ti/Pt/Au, which is compatible with most die attaching methods. The MNOS type of capacitors has low voltage coefficients, low TCC, high Q and high dielectric breakdown. Capacitors are 100% visually inspected and packaged in waffle packs, gel packs or vials. US MICROWAVESmanunufacturer of high reliability microwave integrated circuits MIC technology. US Microwave offers a multitude of applied thin film products and microwave semiconductor devices: manufactures and supplies high quality standard microwave thin film circuits and microwave devices using advanced technical ceramics and semiconductor materials; Products include RF micro devices for hybrid chip and wire applications; microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky diodes, PIN diodes, tunnel diodes, SRD diodes, varactor diodes and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe. SEMICONIX Designs and manufactures standard and custom bipolar and MOS analog devices, semiconductors, analog integrated circuits, discrete components for high performance systems such as cellular/wireless, video amplifiers, heart pacemakers and medical imaging systems. Standard semiconductor components are designed and manufactured for space, medical, telecommunications and military applications only. Company's technology road map is including SiGe epi devices for high speed RF bipolars and high speed fiber optic and optoelectronic applications. Analog devices, ASIC analog design and manufacturing: Semiconix produces a series of semi-custom bipolar analog devices in arrays that are customized by designing a specific metal interconnection mask. The arrays contain a large number of undedicated active and passive components, i.e. transistors, diodes, resistors, capacitors, MOSFET s, LDMOS, photodiodes, phototransistors, etc. Since wafers are stocked before the metal mask, the custom IC development phase is shorter and far less expensive compared to conventional full custom ICs. Customers may provide own analog design. Optoelectronic components: photodiodes, photodiodes arrays, phototransistors, position sensing devices, optocouplers, optoisolators, photodarlington, high voltage phototransistors output, Schottky infrared detectors. Discrete semiconductors: Schottky diodes, Zenner diodes, TVS, small signal bipolar transistors, high voltage bipolar transistors, matched pair bipolar transistors, small signal JFET s and MOSFETs, MCT (MOS controlled tyristors), IGBT. Semiconix 's Divisions:HTE Labs Provides Wafer Foundry, R&D support and Specialty Wafer Fab Processing to customers from semiconductors and microelectronics industry. Wafer foundry includes the following processes: 20V, 45V, 75V, 25V super-beta and high voltage dielectric isolated bipolar process. R&D support is provided in the following fields of microelectronics: thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), sensor technologies (inertial, pressure, temperature, gas and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications like SAW, Ti diffused, light wave guides and Mach-Zender light modulators. Specialty wafer fab processing: epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD and PECVD Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining by KOH anisotropic etch, sputter depositions of Ti/Ni/Ag lift off process, Ti/Pt/Au lift off process, sputter depositions of thin film resistors: SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by trimetal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump. SEMICONWELL designs and manufacture standard and custom Integrated Passive Networks - IPN for the personal computer, telecommunications, industrial controls, automotive, avionics. The Integrated Passive Networks are a sum of resistors, capacitors, inductors, diodes and schottky diodes and are available in through hole and surface mounted packages. SEMICONWELL is suppling integrated termination, filters and ESD protection for use in mobile phones, PDAs, personal computers, notebooks, routers, hubs, internet appliances. Standard Devices - Most standard devices include resistors, capacitors, inductors, diodes and schottky diodes networks and are inventoried by the designated part numbers and can be ordered on line, from factory or from distributors. Custom Devices - Custom IPN (Integrated Passive Networks) are manufactured from customer's prints upon request. US MICROWAVES develops, manufactures and supplies high quality standard microwave thin film circuits and microwave devices including RF bipolars for hybrid chip and wire applications as follows: microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky,PIN, tunnel, SRD, varactor and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.|
Advanced Microwave Components
MIS CHIP CAPACITORS
|PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE|
USMC6056T14-2200pF Series of MIS chip capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible.
US MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in nA range and high BV from 15, 50 and 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.
|TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING|
|All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications.
All US Microwaves products are manufactured using GOLDCHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.
|Temperature Coefficient -55C to 150C||50||ppm/deg C|
|Operating Temperature range||-65 to 200||deg C|
|Maximum withstanding voltage (WV) see NOTE1||28||V|
|Maximum Continuous Operating voltage (Vmax) [Vmax=0.4*WV]||±11||V|
|Peak voltage at 25C, 5 sec||1.5 x (Vmax)||V|
|Insulation resistance at 25 C||109||W|
|Leakage current at 40% of withstanding voltage IL||<10||nA|
|Equivalent Series Res.@ 18GHz||<0.05||W|
|Thermal conductivity||1.2||° C/cm/W|
|MAXIM SAFE ESD strike level per Human Body Model [S-ESD max=(1+C/100)*Vmax] see NOTE2||<253||V|
|UNSAFE ESD strike level per Human Body Model [ESD max=(1+C/100)*WV] see NOTE2||>644||V|
|NOTE1: Devices should NEVER be subjected to maximum withstanding voltage WV. Long term reliability will be adversely affected and severe damage of devices may result.|
|NOTE2: This information is provided to users to be aware of this device ESD sensitivity and take appropriate measures to prevent permanent damage. Please see NOTE 1.|
ESD warning!! MIS capacitors are ESD sensitive. ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.
|GENERAL DIE INFORMATION|
|Substrate||Thickness (mils)||Die size (mils)||Bonding pads||Backside metal|
|Silicon||14±1||60 x 60 ±2||53 x 53 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier||Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization is available for special orders.|
|All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).|
|DIE LAYOUT - MECHANICAL SPECIFICATIONS|
|STANDARD PRODUCTS ORDERING INFORMATION|
|STANDARD PRODUCTS PRICE LIST|
|USM PART #||QUANTITY||Waffle Packs||U/P($)||Film Frame||U/P($)|
|List prices are for standard products, available from stock and for standard [±20%] tolerance. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.|
|Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.|
|ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
|GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.|
|U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.|
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|Last updated: July 01, 2009|
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