USMC14000-nnnV nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS microwave MIS MNOS chip capacitors on 5 mils Silicon Si 140 x 140 mils 419.2 to 83793.6 pF for microwave applications manufactured by US Microwaves

USMC14000-nnnV nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS microwave MIS MNOS chip capacitors on 5 mils Silicon Si 140 x 140 mils 419.2 to 83793.6 pF for microwave applications manufactured by US Microwaves USMC14000-nnnV nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS microwave MIS MNOS chip capacitors on 5 mils Silicon Si 140 x 140 mils 419.2 to 83793.6 pF for microwave applications manufactured by US Microwaves US MICROWAVES nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS Advanced Microwave Components USMC14000-nnnV FEATURES APPLICATIONS MIS (MNOS, MOS) CHIP CAPACITOR Very high Q over wide range of frequencies 2GHz to 40 GHz. Low insertion loss <0.08dB from 2GHz to 18GHz High reliability and ruggedness characteristic of semiconductor devices Small chip size due to high capacitance per unit area and wide range of capacitance Low temperature coefficient and wide operating temperature range. Microwave hybrid circuits DC blocks Capacitive coupling RF bypass capacitors Capacitive loads Oscillators, multipliers Filters, matching networks Switch and comb generators nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC14000-nnnV PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMC14000-nnnV Series of MIS chip capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. US MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in ≤nA range and high BV from 5, 10, 25, 50, 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL CHARACTERISTICS @25°C PARAMETER VALUE UNITS Capacitance range 419.2 to 83793.6 pF Capacitance tolerance 5, 10, 20 % Temperature Coefficient -55°C to 150°C 50 ppm/°C Operating Temperature range -65 to 200 °C Maximum withstanding voltage (Vw) see Note 1 2.5 x Vmax V Maximum Continuous Operating voltage (Vmax) [Vmax=0.4*Vw] 5 to 300 V Peak voltage at 25°C, 5 sec 1.5 x Vmax V Insulation resistance at 25°C 1e10 Ω Leakage current at 50% of withstanding voltage IL <1 nA Thermal conductivity 1.2 °C/cm/W Equivalent Series Res.@ 18GHz <0.05 Ω MAXIM SAFE ESD strike level per Human Body Model [S-ESDmax=(1+C/100)*Vmax] see Note 2 <(1+C/100)*Vmax V UNSAFE ESD strike level per Human Body Model [ESDmax=(1+C/100)*WV] see Note 2 <(1+C/100)*Vw V Note 1: Devices should NEVER be subjected to maximum withstanding voltage WV. Long term reliability will be adversely affected and severe damage of devices may result. Note 2: This information is provided to users to be aware of this device ESD sensitivity and take appropriate measures to prevent permanent damage. Please see NOTE 1. ESD warning! MIS capacitors are ESD sensitive. ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION SUBSTRATE THICKNESS [mils] DIE SIZE LxW [mils] Silicon (Si) 5±1 140x140±2 (3.56x3.56±0.05 mm) CONDUCTOR BONDING PADS BACKSIDE METAL Gold (Au) min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization is available for special orders. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). MIS (MNOS, MOS) CHIP CAPACITOR DIE LAYOUT / MECHANICAL SPECIFICATIONS nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC14000-nnnV MIS (MNOS, MOS) CHIP CAPACITOR CHIP MOUNT nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC14000-nnnV MIS MNOS MOS chip capacitor mount MIS (MNOS, MOS) CHIP CAPACITOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Silicon Microwave MIS (MNOS, MOS) Chip Capacitors are designed for critical designs where space is at premium. The Silicon Microwave MIS (MNOS, MOS) Chip Capacitors can be die attached to the PCB or to a base plate using AuSn or AuGe preforms. Since the Silicon Microwave MIS (MNOS, MOS) Chip Capacitors do not have terminals, they have to be attached using gold wire after the backside is soldered in place. Backside metallization for Silicon Microwave MIS (MNOS, MOS) Chip Capacitors is Ti/Pt/Au which is also compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested. STANDARD PRODUCTS ORDERING INFORMATION USM P/N C [pF] WAFFLE PACK MIN. QTY U/P [$] FILM FRAME MIN. QTY U/P [$] USMC14000-nnnV-393 39000 -WP 10000 4.038 -FF 500 11.301 USMC14000-nnnV-393 39000 -WP 50000 2.379 -FF 2500 6.255 EIA-24 PART NUMBER BUILDER Voltage [V] TOLERANCE [%] C [pF] Multiplier PACKAGE P/N FINDER Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales



US MICROWAVES		nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS
Advanced Microwave Components		USMC14000-nnnV

FEATURES

APPLICATIONS

MIS (MNOS, MOS) CHIP CAPACITOR

Very high Q over wide range of frequencies 2GHz to 40 GHz.

Low insertion loss <0.08dB from 2GHz to 18GHz

High reliability and ruggedness characteristic of semiconductor devices

Small chip size due to high capacitance per unit area and wide range of capacitance

Low temperature coefficient and wide operating temperature range.

Microwave hybrid circuits

DC blocks

Capacitive coupling

RF bypass capacitors

Capacitive loads

Oscillators, multipliers

Filters, matching networks

Switch and comb generators

nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC14000-nnnV

PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE

USMC14000-nnnV Series of MIS chip capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible.
US MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in ≤nA range and high BV from 5, 10, 25, 50, 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.

TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING

All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications.
All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.

ELECTRICAL CHARACTERISTICS @25°C
PARAMETER	VALUE	UNITS
Capacitance range	419.2 to 83793.6	pF
Capacitance tolerance	5, 10, 20	%
Temperature Coefficient -55°C to 150°C	50	ppm/°C
Operating Temperature range	-65 to 200	°C
Maximum withstanding voltage (Vw) see Note 1	2.5 x Vmax	V
Maximum Continuous Operating voltage (Vmax) [Vmax=0.4*Vw]	5 to 300	V
Peak voltage at 25°C, 5 sec	1.5 x Vmax	V
Insulation resistance at 25°C	1e10	Ω
Leakage current at 50% of withstanding voltage IL	<1	nA
Thermal conductivity	1.2	°C/cm/W
Equivalent Series Res.@ 18GHz	<0.05	Ω
MAXIM SAFE ESD strike level per Human Body Model [S-ESDmax=(1+C/100)*Vmax] see Note 2	<(1+C/100)*Vmax	V
UNSAFE ESD strike level per Human Body Model [ESDmax=(1+C/100)*WV] see Note 2	<(1+C/100)*Vw	V
Note 1: Devices should NEVER be subjected to maximum withstanding voltage WV. Long term reliability will be adversely affected and severe damage of devices may result. Note 2: This information is provided to users to be aware of this device ESD sensitivity and take appropriate measures to prevent permanent damage. Please see NOTE 1. ESD warning! MIS capacitors are ESD sensitive. ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

GENERAL DIE INFORMATION
SUBSTRATE	THICKNESS [mils]	DIE SIZE LxW [mils]
Silicon (Si)	5±1	140x140±2 (3.56x3.56±0.05 mm)
CONDUCTOR	BONDING PADS	BACKSIDE METAL
Gold (Au)	min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier	Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization is available for special orders.
All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).

MIS (MNOS, MOS) CHIP CAPACITOR DIE LAYOUT / MECHANICAL SPECIFICATIONS

MIS (MNOS, MOS) CHIP CAPACITOR CHIP MOUNT

nnnV MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC14000-nnnV MIS MNOS MOS chip capacitor mount

MIS (MNOS, MOS) CHIP CAPACITOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE

Silicon Microwave MIS (MNOS, MOS) Chip Capacitors are designed for critical designs where space is at premium. The Silicon Microwave MIS (MNOS, MOS) Chip Capacitors can be die attached to the PCB or to a base plate using AuSn or AuGe preforms. Since the Silicon Microwave MIS (MNOS, MOS) Chip Capacitors do not have terminals, they have to be attached using gold wire after the backside is soldered in place. Backside metallization for Silicon Microwave MIS (MNOS, MOS) Chip Capacitors is Ti/Pt/Au which is also compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested.

STANDARD PRODUCTS ORDERING INFORMATION
USM P/N	C [pF]	WAFFLE PACK	MIN. QTY	U/P [$]	FILM FRAME	MIN. QTY	U/P [$]
USMC14000-nnnV-393	39000	-WP	10000	4.038	-FF	500	11.301
USMC14000-nnnV-393	39000	-WP	50000	2.379	-FF	2500	6.255

EIA-24 PART NUMBER BUILDER
Voltage [V]	TOLERANCE [%]	C [pF]	Multiplier	PACKAGE

P/N FINDER

List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.

Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

Last updated: March 04, 2010
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