MIS chip capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. U. S. MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in nA range and high BV from 25, 50 and 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.

US MICROWAVES Advanced Microwave Components	SINGLE VALUE MIS CHIP CAPACITORS         5V 5V SINGLE VALUE MIS CHIP CAPACITORS 100V 100V SINGLE VALUE MIS CHIP CAPACITORS 10V 10V SINGLE VALUE MIS CHIP CAPACITORS 200V 200V SINGLE VALUE MIS CHIP CAPACITORS 25V 25V SINGLE VALUE MIS CHIP CAPACITORS 300V 300V SINGLE VALUE MIS CHIP CAPACITORS 50V 50V SINGLE VALUE MIS CHIP CAPACITORS nnnV nnnV SINGLE VALUE MIS CHIP CAPACITORS CUSTOM SILICON SUBSTRATE MIS, MOS CAPACITORS
	MIS chip capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. U. S. MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in nA range and high BV from 25, 50 and 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.

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