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3A SCHOTTKY BARRIER RECTIFIER DIODE SCHOTTKY DIODES IN DIE FORM FOR HYBRID CIRCUITS USM 1N5822 FEATURES Extremely low forward voltage VF. Low storred charge due to majority carrier conduction. Low power loss, high efficiency APPLICATIONS In DIE form, this device is an excellent selection for many chip and wire HYBRID CIRCUITS PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE The USM 1N5822 series of Schottky diode rectifiers, are produced as bare die, chip form only. Low forward voltage drops are obtained through optimization of the Schottky Barrier for a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. MAXIMUM RATINGS VRRM Maximum Repetitive Reverse Voltage 20 30 40 V IF(AV) Average Rectified Forward Current 3/8 " lead length @ TA = 95°C 3 A IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave 80 A Tstg Storage Temperature Range -65 to +125 °C TJ Operating Junction Temperature -65 to +125 °C ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. THERMAL CHARACTERISTICS PD Power Dissipation 3.6 W RJA Thermal Resistance, Junction to Ambient 28 °C/W ELECTRICAL CHARACTERISTICS (25°C unless otherwise specified)) VF Forward Voltage @3.0A @9.4A 0.475 0.850 0.500 0.900 0.525 0.950 V IR Reverse Current @ rated VR TA = 25°C TA = 100°C 0.5 20 mA CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 190 pF GENERAL DIE INFORMATION Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal Si - Silicon 10±1 66 x 66±3 min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). DIE LAYOUT - MECHANICAL SPECIFICATIONS STANDARD PRODUCTS ORDERING INFORMATION STANDARD PRODUCTS PRICE LIST USM PART # Waffle Packs MINIMUM ORDER QUANTITY U/P($) USM1N5822 -WP 1000pc $ List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice. Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. |
| US MICROWAVES Advanced Microwave Components |
3A
SCHOTTKY BARRIER RECTIFIER DIODE SCHOTTKY DIODES IN DIE FORM FOR HYBRID CIRCUITS USM 1N5822 |
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| PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE |
| The USM 1N5822 series of Schottky diode rectifiers, are produced as bare die, chip form only. Low forward voltage drops are obtained through optimization of the Schottky Barrier for a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. |
| TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING |
| All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1W/sq to 10,000W/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLDCHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. |
| MAXIMUM RATINGS | |||
| SYMBOL | PARAMETER | VALUE | UNITS |
| VRRM | Maximum Repetitive Reverse Voltage | 40 | V |
| IF(AV) | Average Rectified Forward Current 3/8 " lead length @ TA = 95°C |
3 | A |
| IFSM | Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave |
80 | A |
| Tstg | Storage Temperature Range | -65 to +125 | °C |
| TJ | Operating Junction Temperature | -65 to +125 | °C |
| ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. | |||
| THERMAL CHARACTERISTICS | |||
| SYMBOL | PARAMETER | VALUE | UNITS |
| PD | Power Dissipation | 3.6 | W |
| RJA | Thermal Resistance, Junction to Ambient | 28 | °C/W |
| ELECTRICAL
CHARACTERISTICS (25°C unless otherwise specified) |
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| SYMBOL | PARAMETER | VALUE | UNITS |
| USM1N5822 | |||
| VF | Forward Voltage @3.0A @9.4A |
0.525 0.950 |
V |
| IR | Reverse Current @ rated VR TA = 25°C TA = 100°C |
0.5 20 |
mA |
| CT | Total Capacitance VR = 4.0 V, f = 1.0 MHz | 190 | pF |
| GENERAL DIE INFORMATION | ||||
| Substrate | Thickness (mils) | Die size (mils) | Bonding pads | Backside metal |
| Si - Silicon | 10±1 | 66 x 66±3 | min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier | Backside of the die is coated with 0.5µm GOLD , which makes it compatible with AuSi or AuGe die attach. |
| All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For high volume automated assembly, MIS chip capacitors are supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). | ||||
| DIE LAYOUT - MECHANICAL SPECIFICATIONS |
|
| STANDARD PRODUCTS ORDERING INFORMATION |
| STANDARD PRODUCTS PRICE LIST | |||
| USM PART # | Waffle Packs | MINIMUM ORDER QUANTITY | U/P($) |
| USM1N5822 | -WP | 1000pc | $ |
| List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice. | |||
| Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. | |||
| ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. |
| GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. |
| U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. |
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| Last updated: July 01, 2009 | |
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