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Varactor diode, tuning diode: USMSMV30333-04 Single Varactor (Tuning) Diode 13pF same as kNOX SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves
Varactor diode, tuning diode: USMSMV30333-04 Single Varactor (Tuning) Diode 13pF same as kNOX SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Varactor diode, tuning diode: USMSMV30333-04 Single Varactor (Tuning) Diode 13pF same as kNOX SMV30333-07,
kNOX SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 manufactured by US Microwaves - Gold chip technology for known good
varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors,
microwave integrated circuits and advanced microwave components manufactured by US Microwaves Varactor diode, tuning
diode: USMSMV30333-04 Single Varactor (Tuning) Diode 13pF same as kNOX SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07
kNOX SMV30333-07 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode
flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and
advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of
aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit
boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. US MICROWAVES Single Varactor
(Tuning) Diode 13pF Advanced Microwave Components USMSMV30333-04 - BARE DIE FEATURES APPLICATIONS VARACTOR DIODE - BARE
DIE Gold metallization RoHS compliant, Lead Free High reliability bare die Compatible with chip and wire assemblies
Available with top cathode or top anode Chip on Board, System in package SIP Hybrid Circuits Parametric amplifiers,
Parametric Oscillators Voltage-controlled oscillators, PLL circuits Frequency synthesizers USMSMV30333-04 SMV30333-07
Single Varactor (Tuning) Diode 13pF VARACTOR DIODES - PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE Varicap Diode,
Varactor Diode, Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable capacitance that is
a function of the voltage impressed on its terminals. Varactors are operated reverse-biased so no current flows, but
since the thickness of the depletion zone varies with the applied bias voltage, the capacitance of the diode can be
made to vary. Generally, the depletion region thickness is proportional to the square root of the applied voltage; and
capacitance is inversely proportional to the depletion region thickness. Thus, the capacitance is inversely
proportional to the square root of applied voltage. All diodes exhibit this phenomenon to some degree, but specially
made varactor diodes exploit the effect to boost the capacitance and variability range achieved - most diode
fabrication attempts to achieve the opposite. Varactors are principally used as a voltage-controlled capacitor, rather
than as rectifiers. They are commonly used in parametric amplifiers, parametric oscillators and voltage-controlled
oscillators as part of phase-locked loops and frequency synthesizers. Single Varactor Diodes BD series are available in
die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for
high reliability hybrid circuits and multi chip module applications. Common Cathode or Common Anode Varactor Diodes BD
series are available in die form in single configuration: Common Cathode in TOP ANODE configuration and Common Anode in
TOP CATHODE configuration. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board)
and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs,
GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP
have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less
expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions
without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand
harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die
are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the
atmosphere. US Microwaves has reengineered industry standard products and now offers known good die for bare die
applications with gold interconnection and well-engineered materials that further enhance the die reliability. US
Microwaves also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high
reliability SIP solution for medical, military and space applications. DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using US Microwaves in house high reliability semiconductor manufacturing
processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction
passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS
capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete
semiconductors on same chip to obtain standard and custom complex discrete device solutions. All thin film microwave
products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self
passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve
excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications
that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs
proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from
1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid
and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade
mark of Semiconix Corporation. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit
Operating temperature range Top -55 to + 125° C °C Storage temperature Tstg -65 to + 150° C °C Electrical
Characteristics at TA= 25°C, unless otherwise specified Name Symbol Test Conditions Value Unit Min. Typ. Max Reverse
Breakdown Voltage V(BR)R IR=10 µA 8 V Reverse current IR1 VR=6 V 100 nA Diode capacitance CT1 VR=1.65 V f=1MHz 11 14
pF Capacitance ratio C0.3/C1.65 VR=0.3 V, VR=1.65 V,f=1MHz 3 4 Capacitance ratio C1.65/C3 VR=1.65 V, VR=3 V,f=1MHz 3 4
Capacitance ratio CT1/CT10 Capacitance ratio CT2/CT20 Series resistance rS f=50MHzVR=4V 9 Ω CROSS REFERENCE PARTS:
kNOX SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07 GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils]
Bonding pads Backside metallization Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold
with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic
-BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT /
DIMENSIONS / PAD LOCATIONS Click to select → TOP CATHODE TOP ANODE TOP CATHODE USMSMV30333-04 kNOX SMV30333-07, kNOX
SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 Single Varactor (Tuning) Diode 13pFTOP ANODE USMSMV30333-04 kNOX
SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 Single Varactor (Tuning) Diode 13pF cathode
USMSMV30333-04 kNOX SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 Single Varactor (Tuning) Diode
13pFanode USMSMV30333-04 kNOX SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 Single Varactor (Tuning)
Diode 13pF USMSMV30333-04 kNOX SMV30333-07, kNOX SMV30333-07, kNOX SMV30333-07 kNOX SMV30333-07 Single Varactor
(Tuning) Diode 13pF SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE US Microwaves standard bare die components
are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process,
Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be
any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au,
Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation
is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem
known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to
lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from
180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are
brittle and are conducive to increased contact resistance and or bond failure. STANDARD PRODUCTS ORDERING INFORMATION
VERSION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Top cathode USMSMV30333-04-BD -WP 10000 -FF
45000 Top cathode USMSMV30333-04-BD -WP 50000 -FF 225000 Top anode USMSMV30333-04A-BD -WP 10000 -FF 45000 Top anode
USMSMV30333-04A-BD -WP 50000 -FF 225000 LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For
custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - US Microwaves
guarantees continuous supply and availability of any of its standard products provided minimum order quantities are
met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum
order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high
volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD
requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are
available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - US Microwaves accepts only orders placed on line by registered customers. On line orders are verified,
accepted and acknowledged by US Microwaves sales department in writing. Accepted orders are non cancelable binding
contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high
volume and pick and place applications, dice are also shipped on film frame -FF. Products sold for space, military or
medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be
established on a case by case basis. For any special applications, die level KGD qualification requirements, different
packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post"
target="new"> INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line HERE. A copy of the
order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have
to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable
binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom
designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle
packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary.
For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded
film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification
of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability
of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this
information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any
infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise
the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should
not be used within support systems which are intended for surgical implants into the body, to support or sustain life,
in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S.
Microwaves. Home Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales Last updated: US
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