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Varactor diode, tuning diode: USMSMV30333-05 Single Varactor (Tuning) Diode 13pF same as kNOX SMV30333-08 kNOX SMV30333-08 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves
Varactor diode, tuning diode: USMSMV30333-05 Single Varactor (Tuning) Diode 13pF same as kNOX SMV30333-08 kNOX SMV30333-08 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Varactor diode, tuning diode: USMSMV30333-05 Single Varactor (Tuning) Diode 13pF same as kNOX SMV30333-08 kNOX
SMV30333-08 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip
chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced
microwave components manufactured by US Microwaves Varactor diode, tuning diode: USMSMV30333-05 Single Varactor
(Tuning) Diode 13pF same as kNOX SMV30333-08 kNOX SMV30333-08 manufactured by US Microwaves - Gold chip technology for
known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete
semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold
metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package
applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip
and wire. US MICROWAVES Single Varactor (Tuning) Diode 13pF Advanced Microwave Components USMSMV30333-05 - BARE DIE
FEATURES APPLICATIONS VARACTOR DIODE - BARE DIE Gold metallization RoHS compliant, Lead Free High reliability bare die
Compatible with chip and wire assemblies Available with top cathode or top anode Chip on Board, System in package SIP
Hybrid Circuits Parametric amplifiers, Parametric Oscillators Voltage-controlled oscillators, PLL circuits Frequency
synthesizers USMSMV30333-05 SMV30333-08 Single Varactor (Tuning) Diode 13pF VARACTOR DIODES - PRODUCT DESCRIPTION AND
SHORT APPLICATION NOTE Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a type of diode
which has a variable capacitance that is a function of the voltage impressed on its terminals. Varactors are operated
reverse-biased so no current flows, but since the thickness of the depletion zone varies with the applied bias voltage,
the capacitance of the diode can be made to vary. Generally, the depletion region thickness is proportional to the
square root of the applied voltage; and capacitance is inversely proportional to the depletion region thickness. Thus,
the capacitance is inversely proportional to the square root of applied voltage. All diodes exhibit this phenomenon to
some degree, but specially made varactor diodes exploit the effect to boost the capacitance and variability range
achieved - most diode fabrication attempts to achieve the opposite. Varactors are principally used as a
voltage-controlled capacitor, rather than as rectifiers. They are commonly used in parametric amplifiers, parametric
oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers. Single
Varactor Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD.
In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications. Common
Cathode or Common Anode Varactor Diodes BD series are available in die form in single configuration: Common Cathode in
TOP ANODE configuration and Common Anode in TOP CATHODE configuration. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE
- SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare
die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC
(System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to
redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to
withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no
longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor
devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to
moisture and corrosive components of the atmosphere. US Microwaves has reengineered industry standard products and now
offers known good die for bare die applications with gold interconnection and well-engineered materials that further
enhance the die reliability. US Microwaves also offers Silicon Printed Circuit Board technology with integrated passive
components as a complete high reliability SIP solution for medical, military and space applications. DISCRETE
SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using US Microwaves in house high
reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion
implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for
best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily
integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.
All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including
ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS
capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution
for all applications that require low noise, long term stability and excellent performance at very high frequencies. US
Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet
resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for
high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP
TECHNOLOGY™ a trade mark of Semiconix Corporation. Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit Operating temperature range Top -55 to + 125° C °C Storage temperature Tstg -65 to +
150° C °C Electrical Characteristics at TA= 25°C, unless otherwise specified Name Symbol Test Conditions Value Unit
Min. Typ. Max Reverse Breakdown Voltage V(BR)R IR=10 µA 8 V Reverse current IR1 VR=6 V 100 nA Diode capacitance CT1
VR=1.65 V f=1MHz 11 14 pF Capacitance ratio C0.3/C1.65 VR=0.3 V, VR=1.65 V,f=1MHz 3 4 Capacitance ratio C1.65/C3
VR=1.65 V, VR=3 V,f=1MHz 3 4 Capacitance ratio CT1/CT10 Capacitance ratio CT2/CT20 Series resistance rS f=50MHzVR=4V 9
Ω CROSS REFERENCE PARTS: kNOX SMV30333-08 GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils] Bonding
pads Backside metallization Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with
TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic -BD1
Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT /
DIMENSIONS / PAD LOCATIONS Click to select → TOP CATHODE TOP ANODE TOP CATHODE USMSMV30333-05 kNOX SMV30333-08 kNOX
SMV30333-08 Single Varactor (Tuning) Diode 13pFTOP ANODE USMSMV30333-05 kNOX SMV30333-08 kNOX SMV30333-08 Single
Varactor (Tuning) Diode 13pF cathode USMSMV30333-05 kNOX SMV30333-08 kNOX SMV30333-08 Single Varactor (Tuning) Diode
13pFanode USMSMV30333-05 kNOX SMV30333-08 kNOX SMV30333-08 Single Varactor (Tuning) Diode 13pF USMSMV30333-05 kNOX
SMV30333-08 kNOX SMV30333-08 Single Varactor (Tuning) Diode 13pF SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION
NOTE US Microwaves standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die
attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft
solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive
epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire
bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used
with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads
with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the
reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of
formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance
and or bond failure. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN
QUANTITY U/P($) Top cathode USMSMV30333-05-BD -WP 10000 -FF 45000 Top cathode USMSMV30333-05-BD -WP 50000 -FF 225000
Top anode USMSMV30333-05A-BD -WP 10000 -FF 45000 Top anode USMSMV30333-05A-BD -WP 50000 -FF 225000 LEAD TIMES - Typical
delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and
lead times. CONTINOUS SUPPLY - US Microwaves guarantees continuous supply and availability of any of its standard
products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or
known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and
shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film
frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via
CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of
product in a particular application. ORDERING - US Microwaves accepts only orders placed on line by registered
customers. On line orders are verified, accepted and acknowledged by US Microwaves sales department in writing.
Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and
shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film
frame -FF. Products sold for space, military or medical applications, element evaluation and/or level K or S
qualification are subject to minimum order levels to be established on a case by case basis. For any special
applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales
department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE US Microwaves P/N
Quantity E-mail ORDERING: Order on line HERE. A copy of the order along with an order confirmation receipt is issued
instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves
sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die
products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be
available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are
100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on
film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4"
wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that
have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves
guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S.
Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is
assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its
use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S.
Microwaves products are not authorized for and should not be used within support systems which are intended for
surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear
facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF
Request Quote Inventory Place Order Contact sales Last updated: US MICROWAVES www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 ©1990- US MICROWAVES All rights reserved. No material from this
site may be used or reproduced without permission.
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