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Varactor diode, tuning diode: USMMMBV2103 Single Varactor (Tuning) Diode 10pF same as ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves
Varactor diode, tuning diode: USMMMBV2103 Single Varactor (Tuning) Diode 10pF same as ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Varactor diode, tuning diode: USMMMBV2103 Single Varactor (Tuning) Diode 10pF same as ETL MMBV2103LT1, ETL
MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi
MMBV2103LT1 Motorola MMBV2103LT1 manufactured by US Microwaves - Gold chip technology for known good varactor diode
die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated
circuits and advanced microwave components manufactured by US Microwaves Varactor diode, tuning diode: USMMMBV2103
Single Varactor (Tuning) Diode 10pF same as ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1,
Motorola MMBV2103LT1, Motorola MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 manufactured by
US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare
die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components
manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high
reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip
on board, assembled via flip chip or chip and wire. US MICROWAVES Single Varactor (Tuning) Diode 10pF Advanced
Microwave Components USMMMBV2103 - FLIP CHIP FEATURES APPLICATIONS VARACTOR DIODE - FLIP CHIP Gold metallization RoHS
compliant, Lead Free High reliability flip chip Unique new design Compatible with both chip and wire, flip chip and
surface mount assembly. Chip on Board, System in package SIP Hybrid Circuits Parametric amplifiers, Parametric
Oscillators Voltage-controlled oscillators, PLL circuits Frequency synthesizers USMMMBV2103 MMBV2103LT1 Single Varactor
(Tuning) Diode 10pF VARACTOR DIODES - PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE Varicap Diode, Varactor Diode,
Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable capacitance that is a function of
the voltage impressed on its terminals. Varactors are operated reverse-biased so no current flows, but since the
thickness of the depletion zone varies with the applied bias voltage, the capacitance of the diode can be made to vary.
Generally, the depletion region thickness is proportional to the square root of the applied voltage; and capacitance is
inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square
root of applied voltage. All diodes exhibit this phenomenon to some degree, but specially made varactor diodes exploit
the effect to boost the capacitance and variability range achieved - most diode fabrication attempts to achieve the
opposite. Varactors are principally used as a voltage-controlled capacitor, rather than as rectifiers. They are
commonly used in parametric amplifiers, parametric oscillators and voltage-controlled oscillators as part of
phase-locked loops and frequency synthesizers. Flip Chip Varactor diode series are available in die form in four
different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability hybrid circuits, multi
chip module applications and surface mount applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT
APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of
mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC
(System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to
redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to
withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no
longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor
devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to
moisture and corrosive components of the atmosphere. US Microwaves has reengineered industry standard products and now
offers known good die for bare die applications with gold interconnection and well-engineered materials that further
enhance the die reliability. US Microwaves also offers Silicon Printed Circuit Board technology with integrated passive
components as a complete high reliability SIP solution for medical, military and space applications. DISCRETE
SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using US Microwaves in house high
reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion
implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for
best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily
integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.
All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including
ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS
capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution
for all applications that require low noise, long term stability and excellent performance at very high frequencies. US
Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet
resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for
high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP
TECHNOLOGY™ a trade mark of Semiconix Corporation. Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 200 mA Operating temperature range Top -55
... 150 °C Storage temperature Tstg -55 ... 150 °C Electrical Characteristics at TA= 25°C, unless otherwise
specified Name Symbol Test Conditions Value Unit Min. Typ. Max Reverse Breakdown Voltage V(BR)R (IR=10m Adc) 30 Vdc
Reverse current IR1 (VR=25 Vdc) 100 nA Diode capacitance CT1 VR=4 Vdc, f=1.0 MHz 9 10 11 pF Capacitance ratio CT2/CT30
VR=2 V, VR=30 V, f=1 MHz 2.5 2.9 3.2 Figure of merit Q1 VR=4.0 Vdc ,f=50 MHz 400 CROSS REFERENCE PARTS: ETL
MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola MMBV2103LT1, Onsemi
MMBV2103LT1, Onsemi MMBV2103LT1 GENERAL DIE INFORMATION Substrate Thickness [mils] Size mm [mils] Bonding pads
dimensions per drawing Backside Silicon 10±2 0402 1.02x0.51 [40x20] Type Pad metal Thickness Assembly -FC TiW/Au
4µm±1 Wire bonding or Silver epoxy -GB TiW/Au 25µm±2.5 Thermosonic -GT Ti/Pt/AuSn 5µm±1 Reflow -AN Ni/Au 5µm±1
Solder reflow Optional backside coating and/or marking. LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select process:
-FC -GB -GT -AN USMMMBV2103 ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1,
Motorola MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 Single Varactor (Tuning) Diode 10pF
USMMMBV2103 ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola
MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 Single Varactor (Tuning) Diode 10pF wire
bonding USMMMBV2103 ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola
MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 Single Varactor (Tuning) Diode 10pFthermosonic
USMMMBV2103 ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola
MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 Single Varactor (Tuning) Diode 10pFthermal
USMMMBV2103 ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola
MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 Single Varactor (Tuning) Diode 10pFsolder
reflow USMMMBV2103 ETL MMBV2103LT1, ETL MMBV2103LT1, LRC MMBV2103LT1, LRC MMBV2103LT1, Motorola MMBV2103LT1, Motorola
MMBV2103LT1, Onsemi MMBV2103LT1, Onsemi MMBV2103LT1 Motorola MMBV2103LT1 Single Varactor (Tuning) Diode 10pF
SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE US Microwaves flip chip components are designed for dry
assembly processes as well as for processes that use adhesives, fluxes etc. Dry assembly process is an assembly process
that does not use additional solders, fluxes or adhesives. Thermosonic wire bonding is a dry assembly process. US
Microwaves Flip Chip -FC series can be also used for thermosonic wire bonding. US Microwaves Gold Bump -GB series are
flip chips that are thermosonically attached to a circuit. US Microwaves Gold Tin -GT series are flip chips with Au/Sn,
80/20 metallized pads. GT series can be attached to circuits by bringing the die in contact with a substrate which
temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded to the substrate. Flux less dry
assembly is most reliable but is also most expensive because of thick gold bumps or expensive Au/Sn process. US
Microwaves -FC series is designed to be used for flip chip assembly with conductive silver epoxy. It is a simple and
inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the bonding pads; -align to
substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB series in certain
applications. US Microwaves Gold/Nickel -AN series is the most efficient wafer level chip size package W-CSP designed
for mixed surface mount and flip chip applications. The assembly process is same as for packaged surface mount
components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit board; -flip
chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc. US Microwaves Flip
Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP as well as
surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME
MIN QUANTITY U/P($) Flip chip USMMMBV2103-FC -WP 10000 -FF 45000 Flip chip USMMMBV2103-FC -WP 50000 -FF 225000 Gold
Bump USMMMBV2103-GB -WP 10000 -FF 45000 Gold Bump USMMMBV2103-GB -WP 50000 -FF 225000 Gold-Tin USMMMBV2103-GT -WP 10000
-FF 45000 Gold-Tin USMMMBV2103-GT -WP 50000 -FF 225000 Gold/Nickel USMMMBV2103-AN -WP 10000 -FF 45000 Gold/Nickel
USMMMBV2103-AN -WP 50000 -FF 225000 LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom
devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - US Microwaves guarantees
continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM
PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity
MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick
and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different
packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers
that have issued firm orders pending qualification of product in a particular application. ORDERING - US Microwaves
accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by
US Microwaves sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are
100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place
applications, dice are also shipped on film frame -FF. Products sold for space, military or medical applications,
element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by
case basis. For any special applications, die level KGD qualification requirements, different packaging or custom
configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new">
INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line HERE. A copy of the order along with an order
confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted
and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is
3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices
for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger
orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated
assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES:
Samples are available only for customers that have issued firm orders pending qualification of product in a particular
application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products
provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate
as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights
of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its
product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within
support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space
equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home
Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales Last updated: US MICROWAVES www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 ©1990- US MICROWAVES All rights reserved. No
material from this site may be used or reproduced without permission.
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