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Varactor diode, tuning diode: USMBBY51 Common Cathode Varactor (Tuning) Diode 5pF same as Infineon BBY51, Siemens BBY51 Infineon BBY51 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves
Varactor diode, tuning diode: USMBBY51 Common Cathode Varactor (Tuning) Diode 5pF same as Infineon BBY51, Siemens BBY51 Infineon BBY51 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Varactor diode, tuning diode: USMBBY51 Common Cathode Varactor (Tuning) Diode 5pF same as Infineon BBY51,
Siemens BBY51 Infineon BBY51 manufactured by US Microwaves - Gold chip technology for known good varactor diode die,
varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated
circuits and advanced microwave components manufactured by US Microwaves Varactor diode, tuning diode: USMBBY51 Common
Cathode Varactor (Tuning) Diode 5pF same as Infineon BBY51, Siemens BBY51 Infineon BBY51 manufactured by US Microwaves
- Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer
foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US
Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for
system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via
flip chip or chip and wire. US MICROWAVES Common Cathode Varactor (Tuning) Diode 5pF Advanced Microwave Components
USMBBY51 - BARE DIE FEATURES APPLICATIONS VARACTOR DIODE - BARE DIE Gold metallization RoHS compliant, Lead Free High
reliability bare die Compatible with chip and wire assemblies Chip on Board, System in package SIP Hybrid Circuits
Parametric amplifiers, Parametric Oscillators Voltage-controlled oscillators, PLL circuits Frequency synthesizers
USMBBY51 BBY51 Common Cathode Varactor (Tuning) Diode 5pF VARACTOR DIODES - PRODUCT DESCRIPTION AND SHORT APPLICATION
NOTE Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable
capacitance that is a function of the voltage impressed on its terminals. Varactors are operated reverse-biased so no
current flows, but since the thickness of the depletion zone varies with the applied bias voltage, the capacitance of
the diode can be made to vary. Generally, the depletion region thickness is proportional to the square root of the
applied voltage; and capacitance is inversely proportional to the depletion region thickness. Thus, the capacitance is
inversely proportional to the square root of applied voltage. All diodes exhibit this phenomenon to some degree, but
specially made varactor diodes exploit the effect to boost the capacitance and variability range achieved - most diode
fabrication attempts to achieve the opposite. Varactors are principally used as a voltage-controlled capacitor, rather
than as rectifiers. They are commonly used in parametric amplifiers, parametric oscillators and voltage-controlled
oscillators as part of phase-locked loops and frequency synthesizers. Single Varactor Diodes BD series are available in
die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for
high reliability hybrid circuits and multi chip module applications. Common Cathode or Common Anode Varactor Diodes BD
series are available in die form in single configuration: Common Cathode in TOP ANODE configuration and Common Anode in
TOP CATHODE configuration. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board)
and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs,
GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP
have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less
expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions
without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand
harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die
are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the
atmosphere. US Microwaves has reengineered industry standard products and now offers known good die for bare die
applications with gold interconnection and well-engineered materials that further enhance the die reliability. US
Microwaves also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high
reliability SIP solution for medical, military and space applications. DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using US Microwaves in house high reliability semiconductor manufacturing
processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction
passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS
capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete
semiconductors on same chip to obtain standard and custom complex discrete device solutions. All thin film microwave
products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self
passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve
excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications
that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs
proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from
1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid
and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade
mark of Semiconix Corporation. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit
Diode reverse voltage VR 7 V Forward current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage
temperature Tstg -55 ... 150 °C Electrical Characteristics at TA= 25°C, unless otherwise specified Name Symbol Test
Conditions Value Unit Min. Typ. Max Reverse current IR1 VR=6 V 10 nA Reverse current IR2 VR=6 V, TA=85 grdC 200 nA
Diode capacitance CT1 VR=1 V, f=1 MHz 5.05 5.4 5.75 pF Diode capacitance CT2 VR=2 V, f=1 MHz 3.4 4.2 5.2 pF Diode
capacitance CT3 VR=3 V, f=1 MHz 2.7 3.5 4.6 pF Diode capacitance CT4 VR=4 V, f=1 MHz 2.5 3.1 3.7 pF Capacitance ratio
CT1/CT4 VR=1 V, VR=4 V, f=1 MHz 1.55 1.75 2.2 pF Capacitance difference C1V-C3V VR=1 V, VR=3 V, f=1 MHZ 1.4 1.78 2.2 pF
Capacitance difference C3V-C4V VR=3 V, VR=4 V, f=1 MHZ 0.3 0.5 0.7 pF Series resistance rS VR=1 V, f=1 GHz 0.37 Ω
CROSS REFERENCE PARTS: Infineon BBY51, Siemens BBY51 GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils]
Bonding pads Backside metallization Silicon 6±1 20x10±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold
with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic
-BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT /
DIMENSIONS / PAD LOCATIONS Click to select view side→ CATHODE SIDE ANODE SIDE CATHODE USMBBY51 Infineon BBY51,
Siemens BBY51 Infineon BBY51 Common Cathode Varactor (Tuning) Diode 5pFANODE USMBBY51 Infineon BBY51, Siemens BBY51
Infineon BBY51 Common Cathode Varactor (Tuning) Diode 5pF cathode USMBBY51 Infineon BBY51, Siemens BBY51 Infineon BBY51
Common Cathode Varactor (Tuning) Diode 5pFanode USMBBY51 Infineon BBY51, Siemens BBY51 Infineon BBY51 Common Cathode
Varactor (Tuning) Diode 5pF USMBBY51 Infineon BBY51, Siemens BBY51 Infineon BBY51 Common Cathode Varactor (Tuning)
Diode 5pF Common Cathode on backside SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE US Microwaves standard
bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die
attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside
metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well
as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF
plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential
reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition
from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased
in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic
compounds that are brittle and are conducive to increased contact resistance and or bond failure. STANDARD PRODUCTS
ORDERING INFORMATION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) USMBBY51-BD -WP 10000 -FF
45000 USMBBY51-BD -WP 50000 -FF 225000 LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom
devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - US Microwaves guarantees
continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM
PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity
MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick
and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different
packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers
that have issued firm orders pending qualification of product in a particular application. ORDERING - US Microwaves
accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by
US Microwaves sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are
100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place
applications, dice are also shipped on film frame -FF. Products sold for space, military or medical applications,
element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by
case basis. For any special applications, die level KGD qualification requirements, different packaging or custom
configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new">
INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line HERE. A copy of the order along with an order
confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted
and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is
3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices
for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger
orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated
assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES:
Samples are available only for customers that have issued firm orders pending qualification of product in a particular
application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products
provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate
as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights
of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its
product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within
support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space
equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home
Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales Last updated: US MICROWAVES www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 ©1990- US MICROWAVES All rights reserved. No
material from this site may be used or reproduced without permission.
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