Varactor diode, tuning diode: USMMMBV2108 Single Varactor (Tuning) Diode 27pF same as ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves Varactor diode, tuning diode: USMMMBV2108 Single Varactor (Tuning) Diode 27pF same as ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. Varactor diode, tuning diode: USMMMBV2108 Single Varactor (Tuning) Diode 27pF same as ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves Varactor diode, tuning diode: USMMMBV2108 Single Varactor (Tuning) Diode 27pF same as ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. US MICROWAVES Single Varactor (Tuning) Diode 27pF Advanced Microwave Components USMMMBV2108 - BARE DIE FEATURES APPLICATIONS VARACTOR DIODE - BARE DIE Gold metallization RoHS compliant, Lead Free High reliability bare die Compatible with chip and wire assemblies Available with top cathode or top anode Chip on Board, System in package SIP Hybrid Circuits Parametric amplifiers, Parametric Oscillators Voltage-controlled oscillators, PLL circuits Frequency synthesizers USMMMBV2108 MMBV2108LT1 Single Varactor (Tuning) Diode 27pF VARACTOR DIODES - PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable capacitance that is a function of the voltage impressed on its terminals. Varactors are operated reverse-biased so no current flows, but since the thickness of the depletion zone varies with the applied bias voltage, the capacitance of the diode can be made to vary. Generally, the depletion region thickness is proportional to the square root of the applied voltage; and capacitance is inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage. All diodes exhibit this phenomenon to some degree, but specially made varactor diodes exploit the effect to boost the capacitance and variability range achieved - most diode fabrication attempts to achieve the opposite. Varactors are principally used as a voltage-controlled capacitor, rather than as rectifiers. They are commonly used in parametric amplifiers, parametric oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers. Single Varactor Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications. Common Cathode or Common Anode Varactor Diodes BD series are available in die form in single configuration: Common Cathode in TOP ANODE configuration and Common Anode in TOP CATHODE configuration. HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. US Microwaves has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. US Microwaves also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications. DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using US Microwaves in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions. All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 200 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 °C Electrical Characteristics at TA= 25°C, unless otherwise specified Name Symbol Test Conditions Value Unit Min. Typ. Max Reverse Breakdown Voltage V(BR)R (IR=10m Adc) 30 Vdc Reverse current IR1 (VR=25 Vdc) 100 nA Diode capacitance CT1 VR=4 Vdc, f=1.0 MHz 24.3 27 29.7 pF Capacitance ratio CT2/CT30 VR=2 V, VR=30 V, f=1 MHz 2.5 3 3.2 Figure of merit Q1 VR=4.0 Vdc ,f=50 MHz 300 CROSS REFERENCE PARTS: ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils] Bonding pads Backside metallization Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic -BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select → TOP CATHODE TOP ANODE TOP CATHODE USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pFTOP ANODE USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pF cathode USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pFanode USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pF USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pF SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE US Microwaves standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Top cathode USMMMBV2108-BD -WP 10000 -FF 45000 Top cathode USMMMBV2108-BD -WP 50000 -FF 225000 Top anode USMMMBV2108A-BD -WP 10000 -FF 45000 Top anode USMMMBV2108A-BD -WP 50000 -FF 225000 LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS SUPPLY - US Microwaves guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. ORDERING - US Microwaves accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by US Microwaves sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line HERE. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales Last updated: US MICROWAVES www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 ©1990- US MICROWAVES All rights reserved. No material from this site may be used or reproduced without permission.

 
 
US MICROWAVES   Single Varactor (Tuning) Diode 27pF
Advanced Microwave Components   USMMMBV2108 - BARE DIE
 
 

FEATURES
APPLICATIONS
VARACTOR DIODE - BARE DIE
Gold metallization
RoHS compliant, Lead Free
High reliability bare die
Compatible with chip and wire assemblies
Available with top cathode or top anode
Chip on Board, System in package SIP
Hybrid Circuits
Parametric amplifiers, Parametric Oscillators
Voltage-controlled oscillators, PLL circuits
Frequency synthesizers
 USMMMBV2108 MMBV2108LT1 Single Varactor (Tuning) Diode 27pF


VARACTOR DIODES - PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE
Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable capacitance that is a function of the voltage impressed on its terminals. Varactors are operated reverse-biased so no current flows, but since the thickness of the depletion zone varies with the applied bias voltage, the capacitance of the diode can be made to vary. Generally, the depletion region thickness is proportional to the square root of the applied voltage; and capacitance is inversely proportional to the depletion region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage.
All diodes exhibit this phenomenon to some degree, but specially made varactor diodes exploit the effect to boost the capacitance and variability range achieved - most diode fabrication attempts to achieve the opposite. Varactors are principally used as a voltage-controlled capacitor, rather than as rectifiers. They are commonly used in parametric amplifiers, parametric oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers.
Single Varactor Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module applications.
Common Cathode or Common Anode Varactor Diodes BD series are available in die form in single configuration: Common Cathode in TOP ANODE configuration and Common Anode in TOP CATHODE configuration.

HIGH RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE
COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. US Microwaves has reengineered industry standard products and now offers known good die for bare die applications with gold interconnection and well-engineered materials that further enhance the die reliability. US Microwaves also offers Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution for medical, military and space applications.

DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS
Discrete semiconductors are manufactured using US Microwaves in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.
All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications.
All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.

Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR 30 V
Forward current IF 200 mA
Operating temperature range Top -55 ... 150 °C
Storage temperature Tstg -55 ... 150 °C

Electrical Characteristics at TA= 25°C, unless otherwise specified
Name Symbol Test Conditions Value Unit
Min. Typ. Max
Reverse Breakdown Voltage V(BR)R (IR=10m Adc) 30 Vdc
Reverse current IR1 (VR=25 Vdc) 100 nA
Diode capacitance CT1 VR=4 Vdc, f=1.0 MHz 24.3 27 29.7 pF
Capacitance ratio CT2/CT30 VR=2 V, VR=30 V, f=1 MHz 2.5 3 3.2
Figure of merit Q1 VR=4.0 Vdc ,f=50 MHz 300
 
CROSS REFERENCE PARTS: ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1

GENERAL DIE INFORMATION
Substrate Thickness
[mils]		 Die size
[mils] 		Bonding pads Backside metallization
Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold with TiW barrier. Custom metallization available upon request.
P/N MetalDie attach process
-BD0Au/SiAu/Si eutectic
-BD1Ti/Pd/AuAuSn,AuGe
-BD2Ti/Pt/AuAuSn,AuGe
-BD3Ti/Ni/AuSoft Solder SAC
-BD4Ti/Pt/AuSnAuSn eutectic

LAYOUT / DIMENSIONS / PAD LOCATIONS
Click to select → TOP CATHODE TOP ANODE
TOP CATHODE USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pF
cathode USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pF
USMMMBV2108 ETL MMBV2108LT1, ETL MMBV2108LT1, LRC MMBV2108LT1, LRC MMBV2108LT1, Motorola MMBV2108LT1, Motorola MMBV2108LT1, Onsemi MMBV2108LT1, Onsemi MMBV2108LT1 Onsemi MMBV2108LT1 Single Varactor (Tuning) Diode 27pF

SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE
US Microwaves standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization.
For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used.
In general, after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended.
IMPORTANT NOTE: Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance and or bond failure.

STANDARD PRODUCTS ORDERING INFORMATION

VERSION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($)
Top cathode USMMMBV2108-BD -WP 10000 -FF 45000
Top cathode USMMMBV2108-BD -WP 50000 -FF 225000
Top anode USMMMBV2108A-BD -WP 10000 -FF 45000
Top anode USMMMBV2108A-BD -WP 50000 -FF 225000

PRICES - Listed prices are only for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. No rights can be derived from pricing information provided on this website. Such information is indicative only, for budgetary use only and subject to change by US Microwaves at any time and without notice.
LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times.
CONTINOUS SUPPLY - US Microwaves guarantees continuous supply and availability of any of its standard products provided minimum order quantities are met.
CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page.
SAMPLES - Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.
ORDERING - US Microwaves accepts only orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by US Microwaves sales department in writing. Accepted orders are non cancelable binding contracts.
SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF.
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

INSTANT QUOTE
US Microwaves P/N Quantity E-mail    

ORDERING: Order on line HERE. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

Home Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales

Last updated: July 06, 2009
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©1990-2024 US MICROWAVES All rights reserved. No material from this site may be used or reproduced without permission.