Varactor diode, tuning diode: USMBB545 Single Varactor (Tuning) Diode 20pF same as Infineon BB545, Infineon BB545, Siemens BB545, Siemens BB545 Siemens BB545 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves
Varactor diode, tuning diode: USMBB545 Single Varactor (Tuning) Diode 20pF same as Infineon BB545, Infineon BB545, Siemens BB545, Siemens BB545 Siemens BB545 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Varactor diode, tuning diode: USMBB545 Single Varactor (Tuning) Diode 20pF same as Infineon BB545, Infineon
BB545, Siemens BB545, Siemens BB545 Siemens BB545 manufactured by US Microwaves - Gold chip technology for known good
varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors,
microwave integrated circuits and advanced microwave components manufactured by US Microwaves Varactor diode, tuning
diode: USMBB545 Single Varactor (Tuning) Diode 20pF same as Infineon BB545, Infineon BB545, Siemens BB545, Siemens
BB545 Siemens BB545 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor
diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and
advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of
aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit
boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire. US MICROWAVES Single Varactor
(Tuning) Diode 20pF Advanced Microwave Components USMBB545 - FLIP CHIP FEATURES APPLICATIONS VARACTOR DIODE - FLIP CHIP
Gold metallization RoHS compliant, Lead Free High reliability flip chip Unique new design Compatible with both chip and
wire, flip chip and surface mount assembly. Chip on Board, System in package SIP Hybrid Circuits Parametric amplifiers,
Parametric Oscillators Voltage-controlled oscillators, PLL circuits Frequency synthesizers USMBB545 BB545 Single
Varactor (Tuning) Diode 20pF VARACTOR DIODES - PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE Varicap Diode, Varactor
Diode, Variable Capacitance Diode or Tuning Diode is a type of diode which has a variable capacitance that is a
function of the voltage impressed on its terminals. Varactors are operated reverse-biased so no current flows, but
since the thickness of the depletion zone varies with the applied bias voltage, the capacitance of the diode can be
made to vary. Generally, the depletion region thickness is proportional to the square root of the applied voltage; and
capacitance is inversely proportional to the depletion region thickness. Thus, the capacitance is inversely
proportional to the square root of applied voltage. All diodes exhibit this phenomenon to some degree, but specially
made varactor diodes exploit the effect to boost the capacitance and variability range achieved - most diode
fabrication attempts to achieve the opposite. Varactors are principally used as a voltage-controlled capacitor, rather
than as rectifiers. They are commonly used in parametric amplifiers, parametric oscillators and voltage-controlled
oscillators as part of phase-locked loops and frequency synthesizers. Flip Chip Varactor diode series are available in
die form in four different pad compositions: -FC, -GB, -GT and -AN. These products are ideal for high reliability
hybrid circuits, multi chip module applications and surface mount applications. HIGH RELIABILITY BARE DIE AND SYSTEM IN
PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are integrating proven mature products
in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc that cannot be easily implemented in
SOC (System-on-Chip) technology. COB and SiP have small size footprint, high density, shorter design cycle time, easier
to redesign and rework, use simpler and less expensive assembly process. For extreme applications the bare die has to
withstand also harsh environmental conditions without the protection of a package. KGD, Known Good Die concept is no
longer satisfactory if the die cannot withstand harsh environmental conditions and degrades. Standard semiconductor
devices supplied by many manufacturers in bare die are build with exposed aluminum pads that are extremely sensitive to
moisture and corrosive components of the atmosphere. US Microwaves has reengineered industry standard products and now
offers known good die for bare die applications with gold interconnection and well-engineered materials that further
enhance the die reliability. US Microwaves also offers Silicon Printed Circuit Board technology with integrated passive
components as a complete high reliability SIP solution for medical, military and space applications. DISCRETE
SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are manufactured using US Microwaves in house high
reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion
implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for
best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or Sichrome SiCr thin film resistors are easily
integrated with discrete semiconductors on same chip to obtain standard and custom complex discrete device solutions.
All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including
ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS
capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution
for all applications that require low noise, long term stability and excellent performance at very high frequencies. US
Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet
resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for
high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP
TECHNOLOGY™ a trade mark of Semiconix Corporation. Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward current IF 20 mA Operating temperature range Top -55
... 125 °C Storage temperature Tstg -55 ... 150 °C Electrical Characteristics at TA= 25°C, unless otherwise
specified Name Symbol Test Conditions Value Unit Min. Typ. Max Reverse current IR1 VR=30 V 10 nA Reverse current IR2
VR=30 V, TA=85 grdC 200 nA Diode capacitance CT1 VR=1 V, f=1 MHz 18.5 20 21.5 pF Diode capacitance CT2 VR=2 V, f=1 MHz
13.2 14.8 16.4 pF Diode capacitance CT3 VR=25 V, f=1 MHz 1.85 2.07 2.28 pF Diode capacitance CT4 VR=28 V, f=1 MHz 1.8 2
2.2 pF Capacitance ratio CT1/CT28 VR=1 V, VR=28 V, f=1 MHz 9 10 11 Capacitance ratio CT2/CT25 VR=2 V, VR=25 V, f=1 MHz
6.3 7.2 8.1 Capacitance matching1) DeltaCT/CT VR=1V to 28V, f=1 MHz, 7 diodes sequence, 2.5 % Series resistance rS VR=3
V, f=470 MHz 0.6 Ω CROSS REFERENCE PARTS: Infineon BB545, Infineon BB545, Siemens BB545, Siemens BB545 GENERAL DIE
INFORMATION Substrate Thickness [mils] Size mm [mils] Bonding pads dimensions per drawing Backside Silicon 10±2 0402
1.02x0.51 [40x20] Type Pad metal Thickness Assembly -FC TiW/Au 4µm±1 Wire bonding or Silver epoxy -GB TiW/Au
25µm±2.5 Thermosonic -GT Ti/Pt/AuSn 5µm±1 Reflow -AN Ni/Au 5µm±1 Solder reflow Optional backside coating and/or
marking. LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select process: -FC -GB -GT -AN USMBB545 Infineon BB545, Infineon
BB545, Siemens BB545, Siemens BB545 Siemens BB545 Single Varactor (Tuning) Diode 20pF USMBB545 Infineon BB545, Infineon
BB545, Siemens BB545, Siemens BB545 Siemens BB545 Single Varactor (Tuning) Diode 20pF wire bonding USMBB545 Infineon
BB545, Infineon BB545, Siemens BB545, Siemens BB545 Siemens BB545 Single Varactor (Tuning) Diode 20pFthermosonic
USMBB545 Infineon BB545, Infineon BB545, Siemens BB545, Siemens BB545 Siemens BB545 Single Varactor (Tuning) Diode
20pFthermal USMBB545 Infineon BB545, Infineon BB545, Siemens BB545, Siemens BB545 Siemens BB545 Single Varactor
(Tuning) Diode 20pFsolder reflow USMBB545 Infineon BB545, Infineon BB545, Siemens BB545, Siemens BB545 Siemens BB545
Single Varactor (Tuning) Diode 20pF SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE US Microwaves flip chip
components are designed for dry assembly processes as well as for processes that use adhesives, fluxes etc. Dry
assembly process is an assembly process that does not use additional solders, fluxes or adhesives. Thermosonic wire
bonding is a dry assembly process. US Microwaves Flip Chip -FC series can be also used for thermosonic wire bonding. US
Microwaves Gold Bump -GB series are flip chips that are thermosonically attached to a circuit. US Microwaves Gold Tin
-GT series are flip chips with Au/Sn, 80/20 metallized pads. GT series can be attached to circuits by bringing the die
in contact with a substrate which temperature is more than 280°C. Upon cooling bellow 280C, the die is firmly welded
to the substrate. Flux less dry assembly is most reliable but is also most expensive because of thick gold bumps or
expensive Au/Sn process. US Microwaves -FC series is designed to be used for flip chip assembly with conductive silver
epoxy. It is a simple and inexpensive process consisting of 3 steps: - transfer a thin conductive epoxy layer onto the
bonding pads; -align to substrate and attach; -cure silver epoxy and inspect. Same procedure may be used also with -GB
series in certain applications. US Microwaves Gold/Nickel -AN series is the most efficient wafer level chip size
package W-CSP designed for mixed surface mount and flip chip applications. The assembly process is same as for packaged
surface mount components. The process consist of at least 3 steps; -screen print solder paste on the printed circuit
board; -flip chip, align and attach to the tacky solder paste; -dry paste, reflow at T>220°C, clean, etc. US
Microwaves Flip Chip -AN series are available in many sizes with landing pads compatible with the industry standard CSP
as well as surface mount packages. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMX P/N WAFFLE PACKS QUANTITY U/P($)
FILM FRAME MIN QUANTITY U/P($) Flip chip USMBB545-FC -WP 10000 -FF 45000 Flip chip USMBB545-FC -WP 50000 -FF 225000
Gold Bump USMBB545-GB -WP 10000 -FF 45000 Gold Bump USMBB545-GB -WP 50000 -FF 225000 Gold-Tin USMBB545-GT -WP 10000 -FF
45000 Gold-Tin USMBB545-GT -WP 50000 -FF 225000 Gold/Nickel USMBB545-AN -WP 10000 -FF 45000 Gold/Nickel USMBB545-AN -WP
50000 -FF 225000 LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult
factory for an update on minim orders and lead times. CONTINOUS SUPPLY - US Microwaves guarantees continuous supply and
availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom
products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100%
functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place
applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or
custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have
issued firm orders pending qualification of product in a particular application. ORDERING - US Microwaves accepts only
orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by US Microwaves
sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional
tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice
are also shipped on film frame -FF. Products sold for space, military or medical applications, element evaluation
and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For
any special applications, die level KGD qualification requirements, different packaging or custom configurations,
contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE US
Microwaves P/N Quantity E-mail ORDERING: Order on line HERE. A copy of the order along with an order confirmation
receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and
acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY:
Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks
ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and
wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc,
devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices
may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are
available only for customers that have issued firm orders pending qualification of product in a particular application.
GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided
minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as
possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of
third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its
product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within
support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space
equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home
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