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Varactor diode, tuning diode: USMSMV1413-03 Single Varactor (Tuning) Diode 7pF same as Skyworks SMV1413-079 Skyworks SMV1413-079 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves
Varactor diode, tuning diode: USMSMV1413-03 Single Varactor (Tuning) Diode 7pF same as Skyworks SMV1413-079 Skyworks SMV1413-079 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Varactor diode, tuning diode: USMSMV1413-03 Single Varactor (Tuning) Diode 7pF same as Skyworks SMV1413-079
Skyworks SMV1413-079 manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor
diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and
advanced microwave components manufactured by US Microwaves Varactor diode, tuning diode: USMSMV1413-03 Single Varactor
(Tuning) Diode 7pF same as Skyworks SMV1413-079 Skyworks SMV1413-079 manufactured by US Microwaves - Gold chip
technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for
discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves.
Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in
package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip
or chip and wire. US MICROWAVES Single Varactor (Tuning) Diode 7pF Advanced Microwave Components USMSMV1413-03 - BARE
DIE FEATURES APPLICATIONS VARACTOR DIODE - BARE DIE Gold metallization RoHS compliant, Lead Free High reliability bare
die Compatible with chip and wire assemblies Available with top cathode or top anode Chip on Board, System in package
SIP Hybrid Circuits Parametric amplifiers, Parametric Oscillators Voltage-controlled oscillators, PLL circuits
Frequency synthesizers USMSMV1413-03 SMV1413-079 Single Varactor (Tuning) Diode 7pF VARACTOR DIODES - PRODUCT
DESCRIPTION AND SHORT APPLICATION NOTE Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a
type of diode which has a variable capacitance that is a function of the voltage impressed on its terminals. Varactors
are operated reverse-biased so no current flows, but since the thickness of the depletion zone varies with the applied
bias voltage, the capacitance of the diode can be made to vary. Generally, the depletion region thickness is
proportional to the square root of the applied voltage; and capacitance is inversely proportional to the depletion
region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage. All diodes
exhibit this phenomenon to some degree, but specially made varactor diodes exploit the effect to boost the capacitance
and variability range achieved - most diode fabrication attempts to achieve the opposite. Varactors are principally
used as a voltage-controlled capacitor, rather than as rectifiers. They are commonly used in parametric amplifiers,
parametric oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers.
Single Varactor Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode
XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module
applications. Common Cathode or Common Anode Varactor Diodes BD series are available in die form in single
configuration: Common Cathode in TOP ANODE configuration and Common Anode in TOP CATHODE configuration. HIGH
RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are
integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc
that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high
density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For
extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a
package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental
conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with
exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. US
Microwaves has reengineered industry standard products and now offers known good die for bare die applications with
gold interconnection and well-engineered materials that further enhance the die reliability. US Microwaves also offers
Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution
for medical, military and space applications. DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are
manufactured using US Microwaves in house high reliability semiconductor manufacturing processes. All semiconductor
devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts
and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or
Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard
and custom complex discrete device solutions. All thin film microwave products are manufactured using advanced
semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold
interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability.
Thin film technology is the preferred solution for all applications that require low noise, long term stability and
excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition
of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products
are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US
Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. Maximum
Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 30 V Forward
current IF 20 mA Operating temperature range Top -55 ... 125 °C Storage temperature Tstg -55 ... 150 °C Electrical
Characteristics at TA= 25°C, unless otherwise specified Name Symbol Test Conditions Value Unit Min. Typ. Max Reverse
Breakdown Voltage V(BR)R IR=10 µA 30 V Reverse current IR1 VR=24 V; 20 nA Diode capacitance CT1 VR=0.5 V; f=1MHz; 7.4
pF Diode capacitance CT2 VR=1 V; f=1MHz; 6.4 pF Diode capacitance CT3 VR=4 V; f=1MHz; 3.64 4.42 pF Capacitance ratio
C0/C30 VR=0 V, VR=30 V,f=1MHz 4.2 Series resistance rS f=500MHz;VR=4V 0.35 Ω Figure of merit Q1 VR=4.0 Vdc ,f=50 MHz
2400 CROSS REFERENCE PARTS: Skyworks SMV1413-079 GENERAL DIE INFORMATION Substrate Thickness [mils] Die size [mils]
Bonding pads Backside metallization Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99% electroplated gold
with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0 Au/Si Au/Si eutectic
-BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn eutectic LAYOUT /
DIMENSIONS / PAD LOCATIONS Click to select → TOP CATHODE TOP ANODE TOP CATHODE USMSMV1413-03 Skyworks SMV1413-079
Skyworks SMV1413-079 Single Varactor (Tuning) Diode 7pFTOP ANODE USMSMV1413-03 Skyworks SMV1413-079 Skyworks
SMV1413-079 Single Varactor (Tuning) Diode 7pF cathode USMSMV1413-03 Skyworks SMV1413-079 Skyworks SMV1413-079 Single
Varactor (Tuning) Diode 7pFanode USMSMV1413-03 Skyworks SMV1413-079 Skyworks SMV1413-079 Single Varactor (Tuning) Diode
7pF USMSMV1413-03 Skyworks SMV1413-079 Skyworks SMV1413-079 Single Varactor (Tuning) Diode 7pF SEMICONDUCTOR ASSEMBLY
PROCESS - SHORT APPLICATION NOTE US Microwaves standard bare die components are designed for thermosonic GOLD wire
bonding and AuSi eutectic die attach. For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended
backside metallization. For soft solder die attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au.
For silver filled conductive epoxy die attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general,
after die attach, prior to wire bonding operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE:
Aluminum wire should not be used with gold pads due to potential reliability problem known as purple plague. Same it
applies to Aluminum bonding pads with gold wire! In the transition from SnPb solder to lead free and RoHS compliant
packaging and assembly processes the reflow temperature has increased in some cases from 180°C to 220°C. This may
cause an increase of the rate of formation of gold aluminum intermetallic compounds that are brittle and are conducive
to increased contact resistance and or bond failure. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMS P/N WAFFLE
PACKS QUANTITY U/P($) FILM FRAME MIN QUANTITY U/P($) Top cathode USMSMV1413-03-BD -WP 10000 -FF 45000 Top cathode
USMSMV1413-03-BD -WP 50000 -FF 225000 Top anode USMSMV1413-03A-BD -WP 10000 -FF 45000 Top anode USMSMV1413-03A-BD -WP
50000 -FF 225000 LEAD TIMES - Typical delivery for standard products is 4-6 weeks ARO. For custom devices consult
factory for an update on minim orders and lead times. CONTINOUS SUPPLY - US Microwaves guarantees continuous supply and
availability of any of its standard products provided minimum order quantities are met. CUSTOM PRODUCTS - For custom
products sold as tested, bare die or known good die KGD, there will be a minimum order quantity MOQ. Dice are 100%
functional tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place
applications, dice are also shipped on film frame -FF. For special die level KGD requirements, different packaging or
custom configurations, contact sales via CONTACTS page. SAMPLES - Samples are available only for customers that have
issued firm orders pending qualification of product in a particular application. ORDERING - US Microwaves accepts only
orders placed on line by registered customers. On line orders are verified, accepted and acknowledged by US Microwaves
sales department in writing. Accepted orders are non cancelable binding contracts. SHIPING - Dice are 100% functional
tested, visual inspected and shipped in antistatic waffle packs. For high volume and pick and place applications, dice
are also shipped on film frame -FF. Products sold for space, military or medical applications, element evaluation
and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For
any special applications, die level KGD qualification requirements, different packaging or custom configurations,
contact sales department. /cgi-bin/rfq.cgi" method="post" target="new"> INSTANT QUOTE US
Microwaves P/N Quantity E-mail ORDERING: Order on line HERE. A copy of the order along with an order confirmation
receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and
acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY:
Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks
ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and
wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc,
devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices
may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are
available only for customers that have issued firm orders pending qualification of product in a particular application.
GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided
minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as
possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of
third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its
product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within
support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space
equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home
Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales Last updated: US MICROWAVES www.semiconix-semiconductor.com Tel:(408)986-8026 Fax:(408)986-8027 ©1990- US MICROWAVES All rights reserved. No
material from this site may be used or reproduced without permission.
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