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Varactor diode, tuning diode: USMBBY58 Single Varactor (Tuning) Diode 18pF same as Infineon BBY58-02L, Siemens BBY58-02L Infineon BBY58-02L manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves
Varactor diode, tuning diode: USMBBY58 Single Varactor (Tuning) Diode 18pF same as Infineon BBY58-02L, Siemens BBY58-02L Infineon BBY58-02L manufactured by US Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled via flip chip or chip and wire.
Varactor diode, tuning diode: USMBBY58 Single Varactor (Tuning) Diode 18pF same as Infineon BBY58-02L, Siemens
BBY58-02L Infineon BBY58-02L manufactured by US Microwaves - Gold chip technology for known good varactor diode die,
varactor diode flip chip, varactor diode bare die, wafer foundry for discrete semiconductors, microwave integrated
circuits and advanced microwave components manufactured by US Microwaves Varactor diode, tuning diode: USMBBY58 Single
Varactor (Tuning) Diode 18pF same as Infineon BBY58-02L, Siemens BBY58-02L Infineon BBY58-02L manufactured by US
Microwaves - Gold chip technology for known good varactor diode die, varactor diode flip chip, varactor diode bare die,
wafer foundry for discrete semiconductors, microwave integrated circuits and advanced microwave components manufactured
by US Microwaves. Gold metallization for interconnections instead of aluminum or copper, for high reliability devices
for system in package applications using silicon printed circuit boards, ceramic substrates or chip on board, assembled
via flip chip or chip and wire. US MICROWAVES Single Varactor (Tuning) Diode 18pF Advanced Microwave Components
USMBBY58 - BARE DIE FEATURES APPLICATIONS VARACTOR DIODE - BARE DIE Gold metallization RoHS compliant, Lead Free High
reliability bare die Compatible with chip and wire assemblies Available with top cathode or top anode Chip on Board,
System in package SIP Hybrid Circuits Parametric amplifiers, Parametric Oscillators Voltage-controlled oscillators, PLL
circuits Frequency synthesizers USMBBY58 BBY58-02L Single Varactor (Tuning) Diode 18pF VARACTOR DIODES - PRODUCT
DESCRIPTION AND SHORT APPLICATION NOTE Varicap Diode, Varactor Diode, Variable Capacitance Diode or Tuning Diode is a
type of diode which has a variable capacitance that is a function of the voltage impressed on its terminals. Varactors
are operated reverse-biased so no current flows, but since the thickness of the depletion zone varies with the applied
bias voltage, the capacitance of the diode can be made to vary. Generally, the depletion region thickness is
proportional to the square root of the applied voltage; and capacitance is inversely proportional to the depletion
region thickness. Thus, the capacitance is inversely proportional to the square root of applied voltage. All diodes
exhibit this phenomenon to some degree, but specially made varactor diodes exploit the effect to boost the capacitance
and variability range achieved - most diode fabrication attempts to achieve the opposite. Varactors are principally
used as a voltage-controlled capacitor, rather than as rectifiers. They are commonly used in parametric amplifiers,
parametric oscillators and voltage-controlled oscillators as part of phase-locked loops and frequency synthesizers.
Single Varactor Diodes BD series are available in die form in two configurations, Top Cathode XXXX-BD or Top Anode
XXXXA-BD. In die form, these products are ideal for high reliability hybrid circuits and multi chip module
applications. Common Cathode or Common Anode Varactor Diodes BD series are available in die form in single
configuration: Common Cathode in TOP ANODE configuration and Common Anode in TOP CATHODE configuration. HIGH
RELIABILITY BARE DIE AND SYSTEM IN PACKAGE - SHORT APPLICATION NOTE COB (Chip on Board) and SiP (System-in-Package) are
integrating proven mature products in bare die of mixed technologies i.e. Si, GaAs, GaN, InP, passive components, etc
that cannot be easily implemented in SOC (System-on-Chip) technology. COB and SiP have small size footprint, high
density, shorter design cycle time, easier to redesign and rework, use simpler and less expensive assembly process. For
extreme applications the bare die has to withstand also harsh environmental conditions without the protection of a
package. KGD, Known Good Die concept is no longer satisfactory if the die cannot withstand harsh environmental
conditions and degrades. Standard semiconductor devices supplied by many manufacturers in bare die are build with
exposed aluminum pads that are extremely sensitive to moisture and corrosive components of the atmosphere. US
Microwaves has reengineered industry standard products and now offers known good die for bare die applications with
gold interconnection and well-engineered materials that further enhance the die reliability. US Microwaves also offers
Silicon Printed Circuit Board technology with integrated passive components as a complete high reliability SIP solution
for medical, military and space applications. DISCRETE SEMICONDUCTORS MANUFACTURING PROCESS Discrete semiconductors are
manufactured using US Microwaves in house high reliability semiconductor manufacturing processes. All semiconductor
devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts
and gold interconnect metallization for best performance and reliability. MNOS capacitors, Tantalum Nitride TaN or
Sichrome SiCr thin film resistors are easily integrated with discrete semiconductors on same chip to obtain standard
and custom complex discrete device solutions. All thin film microwave products are manufactured using advanced
semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold
interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability.
Thin film technology is the preferred solution for all applications that require low noise, long term stability and
excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition
of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products
are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US
Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. Maximum
Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage VR 10 V Forward
current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 °C Electrical
Characteristics at TA= 25°C, unless otherwise specified Name Symbol Test Conditions Value Unit Min. Typ. Max Reverse
current IR1 VR=8 V 10 nA Reverse current IR2 VR=8 V, TA=85 grdC 100 nA Diode capacitance CT1 VR=1 V, f=1 MHz 17.5 18.3
19.3 pF Diode capacitance CT2 VR=2 V, f=1 MHz 11.4 12.35 13.3 pF Diode capacitance CT3 VR=3 V, f=1 MHz 7.8 8.6 9.3 pF
Diode capacitance CT4 VR=4 V, f=1 MHz 5.5 6 6.6 pF Diode capacitance CT5 VR=6 V, f=1 MHz 3.8 4.7 5.5 pF Capacitance
ratio CT1/CT3 VR=1 V, VR=3 V, f=1 MHz 1.9 2.15 2.4 Capacitance ratio CT1/CT4 VR=1 V, VR=4 V, f=1 MHz 2.7 3.05 3.5
Capacitance ratio CT4/CT6 VR=4 V, VR=6 V, f=1 MHz 1.15 1.3 1.45 Series resistance rS VR=1 V, f=470 MHz 0.3 Ω CROSS
REFERENCE PARTS: Infineon BBY58-02L, Siemens BBY58-02L GENERAL DIE INFORMATION Substrate Thickness [mils] Die size
[mils] Bonding pads Backside metallization Silicon 6±1 10x20±2 Pad metal is TiW/Au, 4µm±1 thick, 99.99%
electroplated gold with TiW barrier. Custom metallization available upon request. P/N Metal Die attach process -BD0
Au/Si Au/Si eutectic -BD1 Ti/Pd/Au AuSn,AuGe -BD2 Ti/Pt/Au AuSn,AuGe -BD3 Ti/Ni/Au Soft Solder SAC -BD4 Ti/Pt/AuSn AuSn
eutectic LAYOUT / DIMENSIONS / PAD LOCATIONS Click to select → TOP CATHODE TOP ANODE TOP CATHODE USMBBY58 Infineon
BBY58-02L, Siemens BBY58-02L Infineon BBY58-02L Single Varactor (Tuning) Diode 18pFTOP ANODE USMBBY58 Infineon
BBY58-02L, Siemens BBY58-02L Infineon BBY58-02L Single Varactor (Tuning) Diode 18pF cathode USMBBY58 Infineon
BBY58-02L, Siemens BBY58-02L Infineon BBY58-02L Single Varactor (Tuning) Diode 18pFanode USMBBY58 Infineon BBY58-02L,
Siemens BBY58-02L Infineon BBY58-02L Single Varactor (Tuning) Diode 18pF USMBBY58 Infineon BBY58-02L, Siemens BBY58-02L
Infineon BBY58-02L Single Varactor (Tuning) Diode 18pF SEMICONDUCTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE US
Microwaves standard bare die components are designed for thermosonic GOLD wire bonding and AuSi eutectic die attach.
For AuSn or AuGe die attach process, Ti/Pt/Au or Ti/Pd/Au are recommended backside metallization. For soft solder die
attach, backside metallization may be any of Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au. For silver filled conductive epoxy die
attach, AuSi as well as Ti/Ni/Au, Ti/Pt/Au, Ti/Pd/Au may be used. In general, after die attach, prior to wire bonding
operation an oxygen RF plasma clean operation is recommended. IMPORTANT NOTE: Aluminum wire should not be used with
gold pads due to potential reliability problem known as purple plague. Same it applies to Aluminum bonding pads with
gold wire! In the transition from SnPb solder to lead free and RoHS compliant packaging and assembly processes the
reflow temperature has increased in some cases from 180°C to 220°C. This may cause an increase of the rate of
formation of gold aluminum intermetallic compounds that are brittle and are conducive to increased contact resistance
and or bond failure. STANDARD PRODUCTS ORDERING INFORMATION VERSION SMS P/N WAFFLE PACKS QUANTITY U/P($) FILM FRAME MIN
QUANTITY U/P($) Top cathode USMBBY58-BD -WP 10000 -FF 45000 Top cathode USMBBY58-BD -WP 50000 -FF 225000 Top anode
USMBBY58A-BD -WP 10000 -FF 45000 Top anode USMBBY58A-BD -WP 50000 -FF 225000 LEAD TIMES - Typical delivery for standard
products is 4-6 weeks ARO. For custom devices consult factory for an update on minim orders and lead times. CONTINOUS
SUPPLY - US Microwaves guarantees continuous supply and availability of any of its standard products provided minimum
order quantities are met. CUSTOM PRODUCTS - For custom products sold as tested, bare die or known good die KGD, there
will be a minimum order quantity MOQ. Dice are 100% functional tested, visual inspected and shipped in antistatic
waffle packs. For high volume and pick and place applications, dice are also shipped on film frame -FF. For special die
level KGD requirements, different packaging or custom configurations, contact sales via CONTACTS page. SAMPLES -
Samples are available only for customers that have issued firm orders pending qualification of product in a particular
application. ORDERING - US Microwaves accepts only orders placed on line by registered customers. On line orders are
verified, accepted and acknowledged by US Microwaves sales department in writing. Accepted orders are non cancelable
binding contracts. SHIPING - Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs.
For high volume and pick and place applications, dice are also shipped on film frame -FF. Products sold for space,
military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order
levels to be established on a case by case basis. For any special applications, die level KGD qualification
requirements, different packaging or custom configurations, contact sales department. /cgi-bin/rfq.cgi"
method="post" target="new"> INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on
line HERE. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on
line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing
before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs
is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with
delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected
and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller
quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested,
inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm
orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees
continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves
has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S.
Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S.
Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves
products are not authorized for and should not be used within support systems which are intended for surgical implants
into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications
without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF Request Quote Inventory
Place Order Contact sales Last updated: US MICROWAVES www.semiconix-semiconductor.com Tel:(408)986-8026
Fax:(408)986-8027 ©1990- US MICROWAVES All rights reserved. No material from this site may be used or reproduced
without permission.
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