| Heatsink. Aluminum Nitride Heatsinks for microwave chip and wire hybrid circuits assembly. These heat sinks are electrically isolated and can be used also as bonding islands and/or zero ohm jumpers.HSKALNxxxx-05 series of microwave thin film aluminum nitride heat sinks is designed to be used in microwave hybrid circuits. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Level B. Devices are 100% visual inspected and packaged in waffle packs. |
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MICROWAVE THIN FILM ALUMINIUM NITRIDE HEATSINKS HSKALNxxxx-05 |
| The HSKALNxxxx-05 series of microwave thin film aluminum nitride stand offs is designed to be used in microwave hybrid circuits. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Level B. Devices are 100% visual inspected and packaged in waffle packs. | ![]() |
| SUBSTRATE INFORMATION | |||
| Material | Thickness T (mil) | Thermal resistance (°Cmil/W) | Power dissipation (W) |
| AlN, 99.6% | 5±1 | xx | xx |
| PROCESS INFORMATION | |
| Front side metallization | Backside metallization |
| The front side metallization is min 3m thick, 99.99% electroplated gold with a TiW barrier that withstands >30 min at 400°C in air without loss of adhesion. | The backside metallization is min 3m thick, 99.99% electroplated gold with a TiW barrier that withstands >30 min at 400°C in air without loss of adhesion. |
| ORDERING INFORMATION HSKALNxxxx-05 |
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