USMRPD2050BO40-1R8 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER Microwave power resistors on Beryllium Oxide BeO 10W 3dB 20 x 50 mils manufactured by US Microwaves USMRPD2050BO40-1R8 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER Microwave power resistors on Beryllium Oxide BeO 10W 3dB 20 x 50 mils manufactured by US Microwaves US MICROWAVES 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER Advanced Microwave Components USMRPD2050BO40-1R8 FEATURES APPLICATIONS Thin Film Power Resistor Divider 2-Way Wide resistance range: 0.257Ω to 257kΩ, 1% resistor tolerance available Good TCR tracking Low capacitance value Low insertion loss Available in die form and shipped in waffle packs or film frame High power dissipation while working up to GHz range frequencies Biasing discrete transistors circuits Feedback resistors for amplifiers Microwave and RF terminations Resistive microwave dividers Wilkinson power dividers Attenuators 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMRPD2050BO40-1R8, 10W, 0.007pF, Beryllium Oxide (BeO) flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL/MECHANICAL CHARACTERISTICS PARAMETER VALUE UNITS Equivalent impedance 5.40 Ω Insertion loss (Pout/Pin) 3.0 dB Resistance value 1.80 Ω Capacitance (maximum, per resistor) 0.007 pF Rth thermal resistance 5.64 °C/W Power dissipation 10 W Maximum working voltage (R=16.67Ω) 3.19 V Peak voltage at 25°C, 5 sec 4.785 V Insulation Resistance @25°C 1e+12 Ω 3dB frequency (R=16.67Ω) 308.99 GHz RC constant (R=16.67Ω) 0.01 ps Operating Temperature range -55 to +150 °C Temperature Coefficient -55°C to 150°C 75 ppm/°C Resistance range (custom equivalent impedance) 0.257 to 257000 Ω Note: Power dissipation is provided for a temperature difference of 80°C above ambient between substrate and solder joint. ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION Substrate Thickness [mils] Size [mils] Bonding Pads Backside metal Beryllium Oxide (BeO) 40±0.5 50x20±2 The bonding pads of the resistors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. The backside of the die is metallized with TiW/Au which is compatible with most die attaching methods. Other metallizations are available upon special request. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). Thin Film Power Resistor Divider 2-Way DIE LAYOUT / MECHANICAL SPECIFICATIONS 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 Thin Film Power Resistor Divider 2-Way CHIP MOUNT 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 power chip resistor mount Thin Film Power Resistor Divider 2-Way ASSEMBLY PROCESS - SHORT APPLICATION NOTE Power chip resistor dividers are designed for critical designs where space is at premium. The power chip resistor dividers can be die attached to the heat sink or to a base plate using AuSn or AuGe preforms. Since the power chip resistor dividers do not have terminals, they have to be attached using gold ribbon via gap welding after the backside is soldered in place. Backside metallization for power chip resistor dividers is Ti/Pt/Au which is also compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested. POWER CHIP RESISTORS - POWER DERATING DIAGRAM 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 Power Derating POWER CHIP RESISTORS S PARAMETERS 1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 RETURN LOSS S-PARAMETERS STANDARD PRODUCTS ORDERING INFORMATION USM P/N WAFFLE PACK R [Ω] MIN. QTY U/P [$] USMRPD2050BO40-1R8 -WP 1.80 10 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF Request Quote Inventory Request Quote Contact sales

 
 
US MICROWAVES   1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER
Advanced Microwave Components   USMRPD2050BO40-1R8
 
 

FEATURES
APPLICATIONS
Thin Film Power Resistor Divider 2-Way
Wide resistance range: 0.257Ω to 257kΩ, 1% resistor tolerance available
Good TCR tracking
Low capacitance value
Low insertion loss
Available in die form and shipped in waffle packs or film frame
High power dissipation while working up to GHz range frequencies
Biasing discrete transistors circuits
Feedback resistors for amplifiers
Microwave and RF terminations
Resistive microwave dividers
Wilkinson power dividers
Attenuators
1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8

PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE
USMRPD2050BO40-1R8, 10W, 0.007pF, Beryllium Oxide (BeO) flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available.

TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING
All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications.
All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.

ELECTRICAL/MECHANICAL CHARACTERISTICS
PARAMETER VALUE UNITS
Equivalent impedance 5.40 Ω
Insertion loss (Pout/Pin) 3.0 dB
Resistance value 1.80 Ω
Capacitance (maximum, per resistor) 0.007 pF
Rth thermal resistance 5.64 °C/W
Power dissipation 10 W
Maximum working voltage (R=16.67Ω) 3.19 V
Peak voltage at 25°C, 5 sec 4.785 V
Insulation Resistance @25°C 1e+12 Ω
3dB frequency (R=16.67Ω) 308.99 GHz
RC constant (R=16.67Ω) 0.01 ps
Operating Temperature range -55 to +150 °C
Temperature Coefficient -55°C to 150°C 75 ppm/°C
Resistance range (custom equivalent impedance) 0.257 to 257000 Ω
Note: Power dissipation is provided for a temperature difference of 80°C above ambient between substrate and solder joint.
ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

GENERAL DIE INFORMATION
Substrate Thickness [mils] Size [mils] Bonding Pads Backside metal
Beryllium Oxide
(BeO)
40±0.5 50x20±2 The bonding pads of the resistors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. The backside of the die is metallized with TiW/Au which is compatible with most die attaching methods. Other metallizations are available upon special request.
All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP).

Thin Film Power Resistor Divider 2-Way DIE LAYOUT / MECHANICAL SPECIFICATIONS
1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8
Thin Film Power Resistor Divider 2-Way CHIP MOUNT
1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 power chip resistor mount
Thin Film Power Resistor Divider 2-Way ASSEMBLY PROCESS - SHORT APPLICATION NOTE
Power chip resistor dividers are designed for critical designs where space is at premium. The power chip resistor dividers can be die attached to the heat sink or to a base plate using AuSn or AuGe preforms. Since the power chip resistor dividers do not have terminals, they have to be attached using gold ribbon via gap welding after the backside is soldered in place. Backside metallization for power chip resistor dividers is Ti/Pt/Au which is also compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested.

POWER CHIP RESISTORS - POWER DERATING DIAGRAM
1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 Power Derating

POWER CHIP RESISTORS S PARAMETERS
1.8Ω, 308.99GHz, 10W BERYLLIUM OXIDE POWER CHIP RESISTOR DIVIDER USMRPD2050BO40-1R8 RETURN LOSS S-PARAMETERS

STANDARD PRODUCTS ORDERING INFORMATION
USM P/N WAFFLE PACK R [Ω] MIN. QTY U/P [$]
USMRPD2050BO40-1R8 -WP 1.80 10

List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.
Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department.

INSTANT QUOTE
US Microwaves P/N Quantity E-mail    
 

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.


Last updated: October 27, 2010
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