Top contact silicon thin film chip single resistor USM RSTC - design for wide resistance range 10W to 1MW Good TCR tracking Available in 6 pin packages SC70, TSOT, SOT23 Available in chip form as bare die Biasing discrete transistors circuits Feedtop resistors for amplifiers Precision voltage dividers Chip & wire hybrid circuits Thin film Hybrid circuits Surface mount circuits US Microwaves top contact thin film chip resistors USMRSTC2000 series are designed to be used for both surface mount applications as well as chip and wire thin film or thick film hybrid circuits from DC to microwave frequencies. USMRSTC2000 thin film resistor chips are manufactured on silicon substrate and designed to satisfy the requirements of prototype development and circuit trimming in hybrid packages through selective wire-bonding. The top contact silicon chip resistors can be used to build Wheatstone Bridge circuits for low noise instrumentation amplifiers, temperature measurements, sensors circuits, etc. For precision measurements of low value resistors, the Kelvin connection should be used. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs. Integrated passive networks are manufactured using advanced thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10,000 W/sq. All US Microwaves's products are available in die form and are ideal for high reliability hybrid and multi chip module applications.

 
 
US MICROWAVES
Advanced Microwave Components
  TOP CONTACT SILICON THIN FILM CHIP SINGLE RESISTOR
USMRSTC2000-XXX
 
 

FEATURES
APPLICATIONS
SILICON RESISTOR
Wide resistance range 10W to 1MW
Good TCR tracking
Available in chip form as bare die
Available in 2 pin packages thin film hybrid circuits
 
Biasing discrete transistors circuits
Feedtop resistors for amplifiers
Chip & wire hybrid circuits
Thin film Hybrid circuits
Surface mount circuits
TOP CONTACT SILICON single RESISTOR

SHORT PRODUCT APPLICATION NOTE
US Microwaves top contact single thin film silicon chip resistors USMRSTC2000 series are designed to be used for both surface mount applications as well as chip and wire thin film or thick film hybrid circuits from DC to microwave frequencies. USMRSTC2000 thin film resistor chips are manufactured on silicon substrate and designed to satisfy the requirements of prototype development and circuit trimming in hybrid packages through selective wire-bonding. The top contact silicon chip resistors, can be used to build Wheatstone Bridge circuits for low noise instrumentation amplifiers, temperature measurements, sensors circuits, etc. For precision measurements of low value resistors, the Kelvin connection should be used. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs.

SEMICONDUCTOR-THIN FILM MANUFACTURING PROCESS DESCRIPTION
Integrated passive networks are manufactured using advanced thin film technologies including ultra -stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film resistor technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. Semiconwell employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1 W/sq to 10,000 W/sq. All Semiconwell's products are available in die form and as KGD, known good die and are ideal for high reliability hybrid and multi chip module applications. Besides thin film resistors, Semiconwell integrates capacitors, Schottky diodes, Zenner diodes and transistors. Integrated passive and active networks are manufactured using Semiconwell's in house high reliability semiconductor manufacturing processes. All semiconductor devices employ precision doping via ion implantation, silicon nitride junction passivation, platinum silicided contacts and gold interconnect metallization for best performance and reliability. MNOS capacitors and Tantalum Nitride resistors are easily integrated with Schottky diodes to provide complete standard and custom RCD solutions. In die form, these products are ideal for hybrid and multi chip module applications. In packaged form, these products are the best solution where space and weight are a concern.
All US Microwaves products are manufactured using GOLDCHIP TECHNOLOGY™ a trade mark of Semiconix Corporation.

RESISTOR SPECIFICATIONS
Capacitance [pF] Tolerance q [%] Power Rating [mW]
<30pF 1, 5, 10 250 mW@70°C

Stresses beyond listed absolute maximum ratings may cause permanent damage to the device.

ELECTRICAL CHARACTERISTICS
PARAMETER VALUE UNITS
TCR, -55 to +125 °C max.±100 ppm/°C
Operating Voltage,-55 to +125 °C max 100 Vdc
Power Rating (per resistor) @70°C (Derate linearly to zero @150°C) max 250 mW
Thermal Shock, Method 107 MIL-STD-202F max ±0.5 % @DR
High Temperature Exposure,100Hrs@150°C Ambient max ±0.25 % @DR
Moisture Resistance, Method 106 MIL-STD-202F max ±0.5 % @DR
Life, Method 108 MIL-STD-202F (125°C/1000hr) max ±0.5 % @DR
Noise, Method 308 MIL-STD-202F max -25 dB
For R>250kW typ. -20 dB
Tolerance R @25°C ±1,±5,±10 %
Insulation Resistance @25°C min 1012 W

GENERAL DIE INFORMATION
Substrate Thickness (mils) Die size (mils) Bonding pads Backside metal
SiO2 / Silicon 10±2 20 x 20 ± 3 4x4 mils, 3mm thick, 99.99% electroplated gold with a TiW barrier Au/Si compatible with eutectic and conductive epoxy die attach.
All US Microwaves products are available in die form for chip and wire hybrid circuits and multi chip modules applications. Typical delivery for standard die products is 3-4 weeks ARO. For Chip Scale Packaged (CSP) devices consult factory for an update on availability of certain products.

CONDUCTORS RESISTORS BACKSIDE METAL
The bonding pads of the resistors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. Resistive material is ultra stable TaN with low TCR <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, the resistive material is proprietary. Power rating/resistor max 100mW for R<1KW and 25mW for R>1KW. Standard tolerance is ±5%. Backside of the die is metallized with standard Si/Au compatible with eutectic and epoxy die attach. Custom metallizations are available upon special request for die products only.

DIE LAYOUT - MECHANICAL SPECIFICATIONS
TOP CONTACT SILICON single RESISTOR

STANDARD PRODUCTS ORDERING INFORMATION

R R multiplier TOLERANCE
Find part #

USM PART # TOLERANCE % QUANTITY U/P($)
USMRSTC2000/RCODE ±10% 5000pc  
USMRSTC2000/RCODE ±10% 10000pc  
USMRSTC2000/RCODE ±5% 5000pc  
USMRSTC2000/RCODE ±5% 10000pc  
USMRSTC2000/RCODE ±1% 5000pc  
USMRSTC2000/RCODE ±1% 10000pc  
List prices are for standard products, available from stock. List prices for other quantities and tolerances are available on line through Instant Quote. For standard products available from stock, there is a minimum line item order. For custom products please inquire by contacting US Microwaves technical sales. No rights can be derived from pricing information provided on this website. Such information is indicative only, is showed for budgetary use only and subject to change by US MICROWAVES at any time and without notice.
For custom products sold as bare tested die or known good die KGD, minimum order is 5000pc. Dice are 100% functional tested, visual inspected and shipped in antistatic waffle packs. For special die level KGD requirements, different packaging or custom configurations, contact www.usmicrowaves.com.

INSTANT QUOTE
US Microwaves P/N Quantity E-mail    
 

ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week.
SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF).
SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application.

GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met.

U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves.

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Last updated: July 01, 2009
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