USMRE0603T15FC Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor 13GHz Thin Film Flip Chip Resistor 15 mils Alumina Ceramic Al2O3 30 x 60 mils for microwave applications manufactured by US Microwaves USMRE0603T15FC Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor 13GHz Thin Film Flip Chip Resistor 15 mils Alumina Ceramic Al2O3 30 x 60 mils for microwave applications manufactured by US Microwaves US MICROWAVES Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor Advanced Microwave Components USMRE0603T15FC FEATURES APPLICATIONS 13GHz Thin Film Flip Chip Resistor Wide resistance range: 0.1Ω to 5100kΩ, 1% resistor tolerance available Good TCR tracking Low capacitance value Low insertion loss Available in die form and shipped in waffle packs or film frame High power dissipation while working up to GHz range frequencies High reliability and ruggedness Small chip size with reduced stray capacitance per unit area Low temperature coefficient and wide operating temperature range Lab Kit available Biasing discrete transistors circuits Feedback resistors for amplifiers Microwave and RF terminations Resistive microwave dividers Wilkinson power dividers Attenuators Microwave amplifiers Transimpedance amplifiers Optical communication receivers Chip and wire hybrid circuits Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor USMRE0603T15FC PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMRE0603T15FC 60x30 mils, 15 mils thickness Alumina Ceramic (Al2O3) microwave thin film flip chip resistors series is designed to be used in microwave hybrid circuits for biasing of active components and as feedback resistors for high speed transimpedance amplifiers for optical communication receivers. In addition of the regular chip resistors it has a protective dielectric coating that prevents shorting due to the conductive epoxy. These devices are specifically designed and manufactured to be compatible with flip chip conductive epoxy mounting. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs or film frame. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1Ω/sq to 10,000Ω/sq. Resistors from 0.1Ω to x MΩ range are available. The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL CHARACTERISTICS @25°C PARAMETER VALUE UNITS Resistance range 0.1 to 5100000 Ω Capacitance (maximum) 0.243 pF Power dissipation 29.17 mW/°C 3dB frequency (R=50Ω) 13.10 GHz Temperature Coefficient -55°C to 150°C 75 ppm/°C Operating Temperature range -55 to +150 °C Maximum working voltage (R=50Ω) 1.21 V Peak voltage at 25°C, 5 sec 1.71 V Insulation Resistance @25°C 1e+12 Ω RC constant (R=50Ω) 12.15 ps Note: Power dissipation is provided for a temperature difference of 1°C between substrate and thermal (solder) joint. 13GHz Thin Film Flip Chip Resistor - GENERAL DIE INFORMATION SUBSTRATE THICKNESS [mils] DIE SIZE LxW [mils] Alumina Ceramic (Al2O3) 15±0.5 60x30±2 (1.52x0.76±0.05 mm) RESISTOR BONDING PADS BACKSIDE METAL The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10Ω/sq and Rsq>500Ω/sq, the resistive material is proprietary. The bonding pads of the resistors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. The backside of the die is metallized with TiW/Au which is compatible with most die attaching methods. Other metallizations are available upon special request. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). 13GHz Thin Film Flip Chip Resistor - DIE LAYOUT & MECHANICAL SPECIFICATIONS Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor USMRE0603T15FC Note: Image shows area occupied by resistor. Layout for resistor might differ for 1% tolerance due to laser trim requirements. 13GHz Thin Film Flip Chip Resistor S PARAMETERS Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor USMRE0603T15FC RETURN LOSS S-PARAMETERS POWER DERATING DIAGRAM Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor USMRE0603T15FC Power Derating 13GHz Thin Film Flip Chip Resistor CHIP MOUNT Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor USMRE0603T15FC 13GHz Thin Film Flip Chip Resistor mount 13GHz Thin Film Flip Chip Resistor ASSEMBLY PROCESS - SHORT APPLICATION NOTE 13GHz Thin Film Flip Chip Resistor are designed for critical designs where space is at premium. The Alumina, Aluminum Nitride, Berillium Oxide, Fused Silica or Silicon Microwave Thin Film Chip Resistor can ALL be die attached with conductive epoxy. AuSn or AuGe performs can be used to die attach devices with standard backside metallization of TiW/Au. Sn or SnPb can be used to die attach devices with standard backside metallization of Ti/Ni/Au. Ti/Pt/Au and Ti/Pd/Au are custom backside metallizations that have the advantage of being compatible with All methods of die attaching. 13GHz Thin Film Flip Chip Resistor have metallized gold pads as terminals and they have to be attached using gold wire after the backside is soldered in place. STANDARD PRODUCTS ORDERING INFORMATION USM P/N R [Ω] PACKAGE MIN. QTY U/P [$] ORDER STOCK QTY U/P [$] ORDER USMRE0603T15FC-500-1%-WP 50 WAFFLE PACKS 10 RFQ USMRE0603T15FC-500-1%-FF 50 FILM FRAME 500 RFQ EIA-24 PART NUMBER BUILDER TOLERANCE [%] R [Ω] Multiplier PACKAGE P/N FINDER INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: DELIVERY: SHIPPING/PACKAGING: SAMPLES: GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF Request Quote Inventory Place Order Contact sales |
US MICROWAVES | Alumina Ceramic [Al2O3] 13.10GHz Microwave Thin Film Flip Chip Resistor | |
Advanced Microwave Components | USMRE0603T15FC | |
FEATURES
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APPLICATIONS
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13GHz Thin Film Flip Chip Resistor
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PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE |
USMRE0603T15FC 60x30 mils, 15 mils thickness Alumina Ceramic (Al2O3) microwave thin film flip chip resistors series is designed to be used in microwave hybrid circuits for biasing of active components and as feedback resistors for high speed transimpedance amplifiers for optical communication receivers.
In addition of the regular chip resistors it has a protective dielectric coating that prevents shorting due to the conductive epoxy. These devices are specifically designed and manufactured to be compatible with flip chip conductive epoxy mounting. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs or film frame. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1Ω/sq to 10,000Ω/sq. Resistors from 0.1Ω to x MΩ range are available. The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. |
TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING |
All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self
passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity,
performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability
and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range
of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are
ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. |
ELECTRICAL CHARACTERISTICS @25°C | ||
PARAMETER | VALUE | UNITS |
Resistance range | 0.1 to 5100000 | Ω |
Capacitance (maximum) | 0.243 | pF |
Power dissipation | 29.17 | mW/°C |
3dB frequency (R=50Ω) | 13.10 | GHz |
Temperature Coefficient -55°C to 150°C | 75 | ppm/°C |
Operating Temperature range | -55 to +150 | °C |
Maximum working voltage (R=50Ω) | 1.21 | V |
Peak voltage at 25°C, 5 sec | 1.71 | V |
Insulation Resistance @25°C | 1e+12 | Ω |
RC constant (R=50Ω) | 12.15 | ps |
Note: Power dissipation is provided for a temperature difference of 1°C between substrate and thermal (solder) joint. |
13GHz Thin Film Flip Chip Resistor - GENERAL DIE INFORMATION | ||
SUBSTRATE | THICKNESS [mils] | DIE SIZE LxW [mils] |
Alumina Ceramic (Al2O3) | 15±0.5 | 60x30±2 (1.52x0.76±0.05 mm) |
RESISTOR | BONDING PADS | BACKSIDE METAL |
The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10Ω/sq and Rsq>500Ω/sq, the resistive material is proprietary. | The bonding pads of the resistors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion. | The backside of the die is metallized with TiW/Au which is compatible with most die attaching methods. Other metallizations are available upon special request. |
All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). |
13GHz Thin Film Flip Chip Resistor - DIE LAYOUT & MECHANICAL SPECIFICATIONS |
Note: Image shows area occupied by resistor. Layout for resistor might differ for 1% tolerance due to laser trim requirements. |
13GHz Thin Film Flip Chip Resistor S PARAMETERS |
POWER DERATING DIAGRAM |
13GHz Thin Film Flip Chip Resistor CHIP MOUNT |
13GHz Thin Film Flip Chip Resistor ASSEMBLY PROCESS - SHORT APPLICATION NOTE |
13GHz Thin Film Flip Chip Resistor are designed for critical designs where space is at premium.
The Alumina, Aluminum Nitride, Berillium Oxide, Fused Silica or Silicon Microwave Thin Film Chip Resistor can ALL be die attached with conductive epoxy. AuSn or AuGe performs can be used to die attach devices with standard backside metallization of TiW/Au. Sn or SnPb can be used to die attach devices with standard backside metallization of Ti/Ni/Au. Ti/Pt/Au and Ti/Pd/Au are custom backside metallizations that have the advantage of being compatible with All methods of die attaching. 13GHz Thin Film Flip Chip Resistor have metallized gold pads as terminals and they have to be attached using gold wire after the backside is soldered in place. |
STANDARD PRODUCTS ORDERING INFORMATION | ||||||||
USM P/N | R [Ω] | PACKAGE | MIN. QTY | U/P [$] | ORDER | STOCK QTY | U/P [$] | ORDER |
USMRE0603T15FC-500-1%-WP | 50 | WAFFLE PACKS | 10 | RFQ | ||||
USMRE0603T15FC-500-1%-FF | 50 | FILM FRAME | 500 | RFQ |
STANDARD PRODUCTS AVAILABLE FROM STOCK - ORDERING INFORMATION | ||||||||
USM P/N | R [Ω] | WAFFLE PACK | MIN. QTY | U/P [$] | ORDER/RFQ | QTY | U/P [$] | ORDER/RFQ |
Note: 1. EIA-24 values are build of 3 digits. first 2 digits designate the value in Ω, the third digit designates the tenth multiplier. Example 21kΩ = 21000Ω = 21 x 103 = 213 [EIA-24 notation]. Example 250kΩ = 250000Ω = 25 x 104 = 254 [EIA-24 notation]. 2. EIA-96 values are build of 4 digits. first 3 digits designate the value in Ω, the fourth digit designates the tenth multiplier. Example 21kΩ = 21000Ω = 210 x 102 = 2102 [EIA-96 notation]. Example 250kΩ = 250000Ω = 250 x 103 = 2503 [EIA-96 notation]. |
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Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case-by-case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. |
ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts.
DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Items available from stock are delivered within 2-3 days ARO. For same day delivery, a $25.00 rush charge -RSC is added to the invoice. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. |
GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. |
U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. |
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Last updated: December 20, 2010 | |
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