SILICON MEGOHM THIN FILM CHIP RESISTORS

RS3000-1M

The RS3000-1M series of microwave thin film resistors is designed to be used in microwave hybrid circuits for biasing of active components. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Level B. Devices are 100% tested, visual inspected and packaged in waffle packs. US Microwaves employs proprietary thin film technologies for deposition of a wide range of sheet resistance films from 1W/sq to 10.000W /sq. Resistors from 1MW to x 10 MW range are available.

R = xx Sq.

R(MW)	USM Part #
1	RS3000-1M

SUBSTRATE INFORMATION			RESISTOR SPECIFICATIONS
Material	Thickness (mils)	Die size (mils)	Power rating	Tolerances q%	Capacitance
SiO₂/Silicon	10 ą1	(30ą2)x(30ą2)	200mW@70°C	1, 5, 10	2.2pF

PROCESS INFORMATION
Resistor	Conductor	Backside metallization
The resistive material is high stability Tantalum Nitride with low temperature coefficient of resistance, <75ppm/°C typical. For Rsq<10W/sq and Rsq>500W/sq, the resistive material is proprietary.	The bonding pads of the resistors are 3m thick, 99.99% electroplated gold with a TiW barrier that withstands 30 min at 400°C in air without loss of adhesion.	The backside of the die is metallized with TiW/Au which is compatible with most die attaching methods. Other metallizations are available upon special request.

ORDERING INFORMATION RS3000-xxMx-q %

TOLERANCE q	MINIMUM ORDER	U/P($) /1K	U/P($) /5K	U/P($) /10K	U/P($) /50K	U/P($) /100K	DELIVERY	ORDER
10%							2 weeks ARO for 5% and 10% tolerance and 3-4 weeks ARO for 1%. Certain items are available from Stock
5%
1%