The USM-MNOS - Bipolar RF Matching Capacitors are used for "Internal
RF Matching" of high power and high frequency bipolar RF Transistors.
Internal matching is a transforming network built inside the transistor package necessary to raise the low base impedance to a level usable by circuit designers.
This is accomplished by integrating a MOS capacitor inside the same package with the bipolar transistor. Gold wires, with controlled length are attached between the top plate (M2) of the MOS capacitor and the base pads of the transistor. The bottom plate (M1) of he MOS capacitor is wire bonded to the emitter pads, as showed in Fig. 1.
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