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BINARY MICROWAVE CAPACITORS MOS, MIS, MNOS MICROWAVE DUAL BINARY CHIP CAPACITORS BCC SERIES.BCC n Bit Series is a n bit binary chip capacitor that is designed to facilitate bread-boarding or to use where a trimming capability is required. By connecting the pads in parallel the capacitance values are additive, so many combinations are possible.
The BCC n Bit - Series of binary chip capacitors are designed to be used as RF bypass, DC blocks, coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. U.S. Microwaves' advanced semiconductor and thin film technologies allow for an important reduction of the series resistance DCR which is increasing the SRF of the capacitor. High quality
dielectrics with low loss factors translates into an increased Q.These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Devices are 100% tested, visual inspected and packaged in waffle packs.The BCC series of binary chip capacitors are manufactured on silicon substrate and designed to satisfy the requirements of prototype development and circuit trimming in hybrid packages through selective wire-bonding. BCC
n Bit Series has multiple bonding pads allowing the user to select specified increments and a wide range of values. The desired capacitance value is obtained by bonding gold wires to the appropriate pads. This binary chip capacitor can also be used as a single capacitor with maximum value C=C1+C2+...+Cn. Custom designs are available upon request. Custom products. The dielectrics are thermally grown silicon dioxide SiO2 and
LPCVD, PECVD silicon nitride Si3N4. Capacitors are available with single or dual dielectrics.The bonding pads of the capacitors are 3µm thick, 99.99% electroplated gold with a TiW barrier that withstands 30min at 400°C in air without loss of adhesion.The backside of the capacitor die is metallized with Ti/Pt/Au, which is compatible with most die attaching methods, including conductive epoxy, AuSn, AuGe. Other metallizations are available upon special request for Au:Si
eutectic die attach.MORE PROCESS INFORMATION: US Microwaves employs proprietary state-of-the-art LPCVD, PECVD and vacuum deposition technologies for deposition of a wide range of dielectric materials to satisfy every chip capacitor application. High quality dielectrics are deposited using proprietary technologies which makes it possible to pack very high capacitance values onto a quite small area. The dielectric materials are high stability, high Q, low temperature coefficients TCC, low voltage
coefficients, low leakage and high breakdown voltages. For special applications, U.S.Microwaves employs a proprietary trimming technique that allows production of capacitors with tolerances as low as 1% for C>10pF. US MICROWAVES, manufacturer of high reliability microwave integrated circuits MIC technology. US Microwave offers a multitude of applied thin film products
and microwave semiconductor devices: manufactures and supplies high quality standard microwave thin film circuits and microwave devices using advanced technical ceramics and semiconductor materials; Products include RF micro devices for hybrid chip and wire applications; microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors
- ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky diodes, PIN diodes, tunnel diodes, SRD diodes, varactor diodes and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.SEMICONIX Designs and manufactures standard and custom bipolar and MOS analog devices, semiconductors, analog integrated circuits, discrete components
for high performance systems such as cellular/wireless, video amplifiers, heart pacemakers and medical imaging systems. Standard semiconductor components are designed and manufactured for space, medical, telecommunications and military applications only. Company's technology road map is including SiGe epi devices for high speed RF bipolars and high speed fiber optic and optoelectronic applications. Analog devices, ASIC analog design and manufacturing: Semiconix produces a series of semi-custom bipolar
analog devices in arrays that are customized by designing a specific metal interconnection mask. The arrays contain a large number of undedicated active and passive components, i.e. transistors, diodes, resistors, capacitors, MOSFET s, LDMOS, photodiodes, phototransistors, etc. Since wafers are stocked before the metal mask, the custom IC development phase is shorter and far less expensive compared to conventional full custom ICs. Customers may provide own analog design. Optoelectronic components:
photodiodes, photodiodes arrays, phototransistors, position sensing devices, optocouplers, optoisolators, photodarlington, high voltage phototransistors output, Schottky infrared detectors. Discrete semiconductors: Schottky diodes, Zenner diodes, TVS, small signal bipolar transistors, high voltage bipolar transistors, matched pair bipolar transistors, small signal JFET s and MOSFET s, MCT (MOS controlled tyristors), IGBT. Semiconix 's Divisions: HTE
Labs Provides Wafer Foundry, R&D support and Specialty Wafer Fab Processing to customers from semiconductors and microelectronics industry. Wafer foundry includes the following processes: 20V, 45V, 75V, 25V super-beta and high voltage dielectric isolated bipolar process. R&D support is provided in the following fields of microelectronics: thin film active and passive components technologies, flip chip technology (TiW/Cu/Cu/SnPb), sensor technologies (inertial, pressure, temperature, gas
and smoke detectors), optoelectronic technologies and components, discrete and integrated circuits technology development for special applications, LiNbO3 applications like SAW, Ti diffused, light wave guides and Mach-Zender light modulators. Specialty wafer fab processing: epitaxy, SiGe, epi, diffusion and oxidation, ion implant, LPCVD and PECVD Si3N4, SiO2, platinum silicidation, photo-lithography, plasma etching, silicon micro-machining by KOH anisotropic etch, sputter depositions of Ti/Ni/Ag lift
off process, Ti/Pt/Au lift off process, sputter depositions of thin film resistors : SiCr, NiCr, TaN2, silicon wafers back grind and polish followed by trimetal backside sputter depositions, gold backside sputter depositions and alloy : gold electroplating and gold bump.SEMICONWELL designs and manufacture standard and custom Integrated Passive Networks - IPN for the personal computer, telecommunications, industrial controls, automotive,
avionics. The Integrated Passive Networks are a sum of resistors, capacitors, inductors, diodes and schottky diodes and are available in through holle and surface mounted packages. SEMICONWELL is suppling integrated termination, filters and ESD protection for use in mobile phones, PDAs, personal computers, notebooks, routers, hubs, internet appliances. Standard Devices - Most standard devices include resistors, capacitors, inductors, diodes and schottky diodes networks and are inventoried by the designated
part numbers and can be ordered on line, from factory or from distributors. Custom Devices - Custom IPN (Integrated Passive Networks) are manufactured from customer's prints upon request. US MICROWAVES develops, manufactures and supplies high quality standard microwave thin film circuits and microwave devices including RF bipolars for hybrid chip and wire applications as follows: microwave thin film circuits, custom manufacturing
from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky, PIN, tunnel, SRD, varactor and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe. |
