|
USMC1000-100V-0P634 0.634pF 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Calmos CM10PT10V1F, microwave MIS MNOS chip capacitors on 5 mils Silicon Si 10 x 10 mils 0.634 pF for microwave applications manufactured by US Microwaves
USMC1000-100V-0P634 0.634pF 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Calmos CM10PT10V1F, microwave MIS
MNOS chip capacitors on 5 mils Silicon Si 10 x 10 mils 0.634 pF for microwave applications manufactured by US
Microwaves US MICROWAVES 0.634pF 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Advanced Microwave Components
USMC1000-100V-0P634 FEATURES APPLICATIONS MIS (MNOS, MOS) CHIP CAPACITOR Very high Q over wide range of frequencies
2GHz to 40 GHz. Low insertion loss <0.08dB from 2GHz to 18GHz High reliability and ruggedness characteristic of
semiconductor devices Small chip size due to high capacitance per unit area and wide range of capacitance Low
temperature coefficient and wide operating temperature range. Microwave hybrid circuits DC blocks Capacitive coupling
RF bypass capacitors Capacitive loads Oscillators, multipliers Filters, matching networks Switch and comb generators
0.634pF 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS USMC1000-100V-0P634 PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE
USMC1000-100V Series of MIS chip capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC
blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators,
Q has to be as high as possible while the temperature coefficient has to be as small as possible. US MICROWAVES
advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased
SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors
translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias
at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss
less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of
less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also
known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in ≤nA range and high BV
from 5, 10, 25, 50, 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and
breakdown voltages. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are
manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating
Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent
uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that
require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs
proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from
1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and
multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of
Semiconix Corporation. ELECTRICAL CHARACTERISTICS @25°C PARAMETER VALUE UNITS Capacitance range 0.634 pF Capacitance
tolerance 5, 10, 20 % Temperature Coefficient -55°C to 150°C 50 ppm/°C Operating Temperature range -65 to 200 °C
Maximum withstanding voltage (Vw) see Note 1 250 V Maximum Continuous Operating voltage (Vmax) [Vmax=0.4*Vw] 100 V Peak
voltage at 25°C, 5 sec 150 V Insulation resistance at 25°C 1e10 Ω Leakage current at 50% of withstanding voltage IL <1
nA Thermal conductivity 1.2 °C/cm/W Equivalent Series Res.@ 18GHz <0.05 Ω MAXIM SAFE ESD strike level per Human Body
Model [S-ESDmax=(1+C/100)*Vmax] see Note 2 100.6 V UNSAFE ESD strike level per Human Body Model [ESDmax=(1+C/100)*WV]
see Note 2 251.6 V Note 1: Devices should NEVER be subjected to maximum withstanding voltage WV. Long term reliability
will be adversely affected and severe damage of devices may result. Note 2: This information is provided to users to be
aware of this device ESD sensitivity and take appropriate measures to prevent permanent damage. Please see NOTE 1. ESD
warning! MIS capacitors are ESD sensitive. ONLY Proper die handling equipment and procedures should be employed.
Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION
SUBSTRATE THICKNESS [mils] DIE SIZE LxW [mils] Silicon (Si) 5±1 10x10±2 (0.25x0.25±0.05 mm) CONDUCTOR BONDING PADS
BACKSIDE METAL Gold (Au) min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier Backside of the die is
metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization
is available for special orders. All US Microwaves products are available in die form. Typical delivery for die
products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock.
Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and
shipped in waffle packs (WP). MIS (MNOS, MOS) CHIP CAPACITOR DIE LAYOUT / MECHANICAL SPECIFICATIONS 0.634pF 100V MIS
(MNOS, MOS) SILICON CHIP CAPACITORS USMC1000-100V-0P634 MIS (MNOS, MOS) CHIP CAPACITOR CHIP MOUNT 0.634pF 100V MIS
(MNOS, MOS) SILICON CHIP CAPACITORS USMC1000-100V-0P634 MIS MNOS MOS chip capacitor mount MIS (MNOS, MOS) CHIP
CAPACITOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Silicon Microwave MIS (MNOS, MOS) Chip Capacitors are designed for
critical designs where space is at premium. The Silicon Microwave MIS (MNOS, MOS) Chip Capacitors can be die attached
to the PCB or to a base plate using AuSn or AuGe preforms. Since the Silicon Microwave MIS (MNOS, MOS) Chip Capacitors
do not have terminals, they have to be attached using gold wire after the backside is soldered in place. Backside
metallization for Silicon Microwave MIS (MNOS, MOS) Chip Capacitors is Ti/Pt/Au which is also compatible with Sn
solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested. STANDARD PRODUCTS ORDERING
INFORMATION USM P/N C [pF] WAFFLE PACK MIN. QTY U/P [$] FILM FRAME MIN. QTY U/P [$] USMC1000-100V-0P634 0.634 -WP 10000
0.525 -FF 60000 0.174 USMC1000-100V-0P634 0.634 -WP 50000 0.444 -FF 300000 0.153 Products sold for space, military or
medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be
established on a case by case basis. For any special applications, die level KGD qualification requirements, different
packaging or custom configurations, contact sales department. INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING:
Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt
is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US
Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery
for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain
items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire
applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can
be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be
supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for
customers that have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY!
US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities
are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no
responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which
may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without
prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are
intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or
nuclear facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support
PDF Request Quote Inventory Place Order Contact sales
|
