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USMC1000-100V-3P90 3.9pF 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Calmos CM10PT10V1F, microwave MIS MNOS chip capacitors on 5 mils Silicon Si 10 x 10 mils 3.9 pF for microwave applications manufactured by US Microwaves
USMC1000-100V-3P90 3.9pF 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Calmos CM10PT10V1F, microwave MIS MNOS
chip capacitors on 5 mils Silicon Si 10 x 10 mils 3.9 pF for microwave applications manufactured by US Microwaves US
MICROWAVES 3.9pF 100V MIS (MNOS, MOS) SILICON CHIP CAPACITORS Advanced Microwave Components USMC1000-100V-3P90 FEATURES
APPLICATIONS MIS (MNOS, MOS) CHIP CAPACITOR Very high Q over wide range of frequencies 2GHz to 40 GHz. Low insertion
loss <0.08dB from 2GHz to 18GHz High reliability and ruggedness characteristic of semiconductor devices Small chip size
due to high capacitance per unit area and wide range of capacitance Low temperature coefficient and wide operating
temperature range. Microwave hybrid circuits DC blocks Capacitive coupling RF bypass capacitors Capacitive loads
Oscillators, multipliers Filters, matching networks Switch and comb generators 3.9pF 100V MIS (MNOS, MOS) SILICON CHIP
CAPACITORS USMC1000-100V-3P90 PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMC1000-100V Series of MIS chip
capacitors are designed to be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements
and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible
while the temperature coefficient has to be as small as possible. US MICROWAVES advanced semiconductor and thin film
technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin
effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q,
very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US
Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku
band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical
for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors
exhibit high stability, low temperature coefficients, low leakage in ≤nA range and high BV from 5, 10, 25, 50, 100 to
300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.
TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using
advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride
resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance
and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term
stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies
for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US
Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module
applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix
Corporation. ELECTRICAL CHARACTERISTICS @25°C PARAMETER VALUE UNITS Capacitance range 3.9 pF Capacitance tolerance 5,
10, 20 % Temperature Coefficient -55°C to 150°C 50 ppm/°C Operating Temperature range -65 to 200 °C Maximum
withstanding voltage (Vw) see Note 1 250 V Maximum Continuous Operating voltage (Vmax) [Vmax=0.4*Vw] 100 V Peak voltage
at 25°C, 5 sec 150 V Insulation resistance at 25°C 1e10 Ω Leakage current at 50% of withstanding voltage IL <1 nA
Thermal conductivity 1.2 °C/cm/W Equivalent Series Res.@ 18GHz <0.05 Ω MAXIM SAFE ESD strike level per Human Body Model
[S-ESDmax=(1+C/100)*Vmax] see Note 2 103.9 V UNSAFE ESD strike level per Human Body Model [ESDmax=(1+C/100)*WV] see
Note 2 259.8 V Note 1: Devices should NEVER be subjected to maximum withstanding voltage WV. Long term reliability will
be adversely affected and severe damage of devices may result. Note 2: This information is provided to users to be
aware of this device ESD sensitivity and take appropriate measures to prevent permanent damage. Please see NOTE 1. ESD
warning! MIS capacitors are ESD sensitive. ONLY Proper die handling equipment and procedures should be employed.
Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION
SUBSTRATE THICKNESS [mils] DIE SIZE LxW [mils] Silicon (Si) 5±1 10x10±2 (0.25x0.25±0.05 mm) CONDUCTOR BONDING PADS
BACKSIDE METAL Gold (Au) min 4x4 mils, 3µm thick, 99.99% electroplated gold with a TiW barrier Backside of the die is
metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization
is available for special orders. All US Microwaves products are available in die form. Typical delivery for die
products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock.
Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and
shipped in waffle packs (WP). MIS (MNOS, MOS) CHIP CAPACITOR DIE LAYOUT / MECHANICAL SPECIFICATIONS 3.9pF 100V MIS
(MNOS, MOS) SILICON CHIP CAPACITORS USMC1000-100V-3P90 MIS (MNOS, MOS) CHIP CAPACITOR CHIP MOUNT 3.9pF 100V MIS (MNOS,
MOS) SILICON CHIP CAPACITORS USMC1000-100V-3P90 MIS MNOS MOS chip capacitor mount MIS (MNOS, MOS) CHIP CAPACITOR
ASSEMBLY PROCESS - SHORT APPLICATION NOTE Silicon Microwave MIS (MNOS, MOS) Chip Capacitors are designed for critical
designs where space is at premium. The Silicon Microwave MIS (MNOS, MOS) Chip Capacitors can be die attached to the PCB
or to a base plate using AuSn or AuGe preforms. Since the Silicon Microwave MIS (MNOS, MOS) Chip Capacitors do not have
terminals, they have to be attached using gold wire after the backside is soldered in place. Backside metallization for
Silicon Microwave MIS (MNOS, MOS) Chip Capacitors is Ti/Pt/Au which is also compatible with Sn solder. For the more
common SnPb, a Ti/Ni/Au backside metallization should be requested. STANDARD PRODUCTS ORDERING INFORMATION USM P/N C
[pF] WAFFLE PACK MIN. QTY U/P [$] FILM FRAME MIN. QTY U/P [$] USMC1000-100V-3P90 3.9 -WP 10000 0.525 -FF 60000 0.174
USMC1000-100V-3P90 3.9 -WP 50000 0.444 -FF 300000 0.153 Products sold for space, military or medical applications,
element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by
case basis. For any special applications, die level KGD qualification requirements, different packaging or custom
configurations, contact sales department. INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line at:
http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued
instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves
sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die
products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be
available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are
100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on
film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4"
wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that
have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves
guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S.
Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is
assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its
use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S.
Microwaves products are not authorized for and should not be used within support systems which are intended for
surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear
facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF
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