RF Matching Capacitors are used for internal impedance RF Matching of high power and high frequency RF bipolar Transistors. Internal matching is a transforming network built inside the transistor package necessary to raise the low base impedance to a level usable by circuit designers. This is accomplished by integrating a MOS capacitor inside the same package with the bipolar transistor. Gold wires, with controlled length are attached between the top plate (M2) of the MOS capacitor and the base pads of the transistor. The bottom plate (M1) of he MOS capacitor is wire bonded to the emitter pads, as showed. USMRF12040-xx chip capacitors can also be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. US MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in nA range and high BV from 25, 50 and 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.

US MICROWAVES Advanced Microwave Components	CUSTOM PRECISION RF MATCHING CAPACITORS RFMNOS   USMRF12040 RF MATCHING CAPACITORS FOR RF POWER BIPOLAR TRANSISTORS
	RF Matching Capacitors are used for internal impedance RF Matching of high power and high frequency RF bipolar Transistors. Internal matching is a transforming network built inside the transistor package necessary to raise the low base impedance to a level usable by circuit designers. This is accomplished by integrating a MOS capacitor inside the same package with the bipolar transistor. Gold wires, with controlled length are attached between the top plate (M2) of the MOS capacitor and the base pads of the transistor. The bottom plate (M1) of he MOS capacitor is wire bonded to the emitter pads, as showed. USMRF12040-xx chip capacitors can also be used in chip and wire hybrid circuits as RF bypass, DC blocks coupling filter elements and microwave circuit resonant elements. When used as resonant elements in oscillators, Q has to be as high as possible while the temperature coefficient has to be as small as possible. US MICROWAVES advanced semiconductor and thin film technologies allow for an important reduction of series resistance DCR, increased SRF, low insertion loss and skin effect at higher microwave frequencies. High quality dielectrics with low loss factors translate into an increased Q, very high insulation resistance, high breakdown voltage, long term stability under bias at high temperatures. US Microwaves MIS chip capacitors exhibit Q values in excess of 3000 in X band, insertion loss less than 0.08dB through Ku band and series resistance much lower than conventional ceramic chip capacitors. DCR of less than 0.1 ohms is typical for most chip sizes. MIS capacitors with silicon nitride/silicon oxide dielectric, also known as MNOS capacitors exhibit high stability, low temperature coefficients, low leakage in nA range and high BV from 25, 50 and 100 to 300V. MIS Chip capacitors are available in a wide range of die sizes, capacitance values and breakdown voltages.

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