BERYLLIUM OXIDE ISOLATED HEAT SINKS HSKBEOI05xxxyyy 5 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI10xxxyyy 10 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI15xxxyyy 15 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI20xxxyyy 20 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI25xxxyyy 25 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI30xxxyyy 30 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI35xxxyyy 35 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI40xxxyyy 40 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI45xxxyyy 45 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI50xxxyyy 50 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI55xxxyyy 55 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks HSKBEOI60xxxyyy 60 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks The HSKBEOxxxx-TT series of microwave thin film beryllium oxide heat sinks is designed to be used in microwave hybrid circuits. These devices can be used over the full military temperature range -55C to +125C. Quality and workmanship is per MIL-S-883. Level B. Devices are 100% visual inspected and packaged in waffle packs. US MICROWAVES, manufacturer of high reliability microwave integrated circuits  MIC technology. US Microwave offers a multitude of applied thin film products and microwave semiconductor devices: manufactures and supplies high quality standard microwave thin film circuits and microwave devices using advanced technical ceramics and semiconductor materials; Products include RF micro devices  for hybrid chip and wire applications; microwave thin film circuits, custom manufacturing from customer's data, spiral chip inductors - ceramic, sapphire and quartz substrate, thin film resistors - ceramic, silicon and quartz substrates, multi-tap thin film resistors - ceramic and silicon substrates, capacitors MIS for chip and wire applications, MNOS capacitors, MOS capacitors, ceramic capacitors, Schottky diodes, PIN diodes, tunnel diodes, SRD diodes, varactor diodes and zero bias diodes, RF NPN and PNP transistors, high speed LDMOS and T MOSFET s, MMIC - RF IC s silicon and SiGe.

 

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BERYLLIUM OXIDE ISOLATED HEAT SINKS
 
HSKBEOI05xxxyyy5 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI10xxxyyy10 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI15xxxyyy15 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI20xxxyyy20 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI25xxxyyy25 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI30xxxyyy30 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI35xxxyyy35 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI40xxxyyy40 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI45xxxyyy45 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI50xxxyyy50 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI55xxxyyy55 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
HSKBEOI60xxxyyy60 mils thick gold coated thin film Beryllium Oxide Isolated heat sinks
 
   
 
The HSKBEOxxxx-TT series of microwave thin film beryllium oxide heat sinks is designed to be used in microwave hybrid circuits. These devices can be used over the full military temperature range -55°C to +125°C. Quality and workmanship is per MIL-S-883. Level B. Devices are 100% visual inspected and packaged in waffle packs.

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