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USMRP10005040BO-5W-271 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS Microwave power resistors on Beryllium Oxide BeO 5W 16.93 3dB 50 x 100 mils manufactured by US Microwaves
USMRP10005040BO-5W-271 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS Microwave power resistors on Beryllium Oxide BeO 5W 16.93 3dB 50 x 100 mils manufactured by US Microwaves US MICROWAVES 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS Advanced Microwave Components USMRP10005040BO-5W-271 FEATURES APPLICATIONS 3.13GHz BeO POWER CHIP RESISTOR High power dissipation while working up to GHz range frequencies Low insertion loss High reliability and ruggedness Small chip size with reduced stray capacitance per unit area Low temperature coefficient Wide operating temperature range Microwave and RF high power terminations Resistive microwave power dividers Wilkinson power dividers Power attenuators Microwave power amplifiers 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS USMRP10005040BO-5W-271 PRODUCT DESCRIPTION AND SHORT APPLICATION NOTE USMRP10005040BO-5W-271, 5W, 3.13GHz, Beryllium Oxide (BeO) flange less power chip resistors are designed to be used in chip and wire hybrid circuits as microwave and RF power resistors, power terminations, Wilkinson power dividers, power attenuators, microwave power amplifiers, etc. Flange less thin film power chip resistors and terminations have low temperature coefficients, low noise and increased long term stability compared to their thick film counterpart (see app note 110). In high power applications, temperature coefficient of resistance and long term stability have to be the best available. TECHNOLOGY DESCRIPTION: SEMICONDUCTOR-THIN FILM MANUFACTURING All thin film microwave products are manufactured using advanced semiconductors and thin film technologies including ultra-stable and self passivating Tantalum Nitride resistors, gold interconnect metallization and reliable MNOS capacitors to achieve excellent uniformity, performance and reliability. Thin film technology is the preferred solution for all applications that require low noise, long term stability and excellent performance at very high frequencies. US Microwaves employs proprietary thin film technologies for deposition of a wide range of resistive films with sheet resistance films from 1Ω/sq to 10,000Ω/sq. All US Microwaves products are available in die form and are ideal for high reliability hybrid and multi chip module applications. All US Microwaves products are manufactured using GOLD CHIP TECHNOLOGY™ a trade mark of Semiconix Corporation. ELECTRICAL/MECHANICAL CHARACTERISTICS PARAMETER VALUE UNITS Resistance value 270.0 Ω Maxim Power 5 W Maxim Capacitance 0.188 pF 3dB frequency 3.13 GHz Temperature Coefficient -55C to 150C 100 ppm/°C Tolerances available 1 % Operating Temperature range -65 to +200 °C Working voltage (Vw) 41.41 V Peak voltage at 25C, 5 sec 62.115 V Insulation resistance at 25 C 1013 Ω Rth thermal resistance between the resistive layer and the solder joint 1.13 °C/W Note: Power dissipation is provided for a temperature difference of 10°C above ambient between substrate and solder joint. ONLY Proper die handling equipment and procedures should be employed. Stresses beyond listed absolute maximum ratings may cause permanent damage to the device. GENERAL DIE INFORMATION Substrate Thickness [mils] Size [mils] Bonding Pads Backside metal Beryllium Oxide (BeO) 40±3 100x50±2 min 4x4 mils, 3um thick, 99.99% electroplated gold with a TiW barrier Backside of the die is metallized with standard Ti/Pt/Au compatible with Au-Sn, Au-Ge or silver filled conductive epoxy. Custom metallization is available for special orders. All US Microwaves products are available in die form. Typical delivery for die products is 2-3 weeks ARO. For Custom designs, delivery is 3-4 weeks ARO. Certain items may be available from stock. Inventory is periodically updated. All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). 3.13GHz BeO POWER CHIP RESISTOR DIE LAYOUT / MECHANICAL SPECIFICATIONS 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS USMRP10005040BO-5W-271 3.13GHz BeO POWER CHIP RESISTOR CHIP MOUNT 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS USMRP10005040BO-5W-271 power chip resistor mount 3.13GHz BeO POWER CHIP RESISTOR ASSEMBLY PROCESS - SHORT APPLICATION NOTE Flangeless power chip resistors are designed for critical designs where space is at premium. The flangeless power chip resistors can be die attached to the heat sink or to a base plate using AuSn or AuGe preforms. Since the power chip resistors do not have terminals, they have to be attached using gold ribbon via gap welding after the backside is soldered in place. Backside metallization for power chip resistors is Ti/Pt/Au which is also compatible with Sn solder. For the more common SnPb, a Ti/Ni/Au backside metallization should be requested. POWER CHIP RESISTORS - POWER DERATING DIAGRAM 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS USMRP10005040BO-5W-271 Power Derating POWER CHIP RESISTORS S PARAMETERS 270Ω, 3.13GHz 5W BERYLLIUM OXIDE POWER CHIP RESISTORS USMRP10005040BO-5W-271 RETURN LOSS S-PARAMETERS STANDARD PRODUCTS ORDERING INFORMATION USM P/N WAFFLE PACK R [Ω] MIN. QTY U/P [$] USMRP10005040BO-5W-271 -WP 270.0 101 12.67 Products sold for space, military or medical applications, element evaluation and/or level K or S qualification are subject to minimum order levels to be established on a case by case basis. For any special applications, die level KGD qualification requirements, different packaging or custom configurations, contact sales department. INSTANT QUOTE US Microwaves P/N Quantity E-mail ORDERING: Order on line at: http://www.usmicrowaves.com/porder.htm. A copy of the order along with an order confirmation receipt is issued instantly for all orders placed on line. On line Orders have to be verified, accepted and acknowledged by US Microwaves sales department in writing before, becoming non cancelable binding contracts. DELIVERY: Typical delivery for die products packaged in waffle packs is 2-4 weeks ARO. For Custom designs, delivery is 3-5 weeks ARO. Certain items may be available from stock with delivery up to 1 week. SHIPPING/PACKAGING: All devices for chip and wire applications are 100% tested, visual inspected and shipped in waffle packs (WP). For larger orders,>10k pc, devices can be shipped on film frame. For smaller quantities, it may vary. For high volume automated assembly, devices may be supplied as 4" wafers 100% tested, inked and diced on expanded film frame (FF). SAMPLES: Samples are available only for customers that have issued firm orders pending qualification of product in a particular application. GUARANTEED SUPPLY! US Microwaves guarantees continuous supply and availability of all standard products provided minimum order quantities are met. U.S. Microwaves has made every effort to have this information as accurate as possible. However, no responsibility is assumed by U.S. Microwaves for its use, nor for any infringements of rights of third parties which may result from its use. U.S. Microwaves reserves the right to revise the content or modify its product line without prior notice. U.S. Microwaves products are not authorized for and should not be used within support systems which are intended for surgical implants into the body, to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without the specific written consent of U.S. Microwaves. Home Product Tree Tech. Support PDF Request Quote Inventory Request Quote Contact sales
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